# TMN6080NF

**Tritech MOS** · MOSFETs · DFN-8(5x6)

TMN6080NF from Tritech MOS, in a DFN-8(5x6). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal (pin 1, marked by the dot/Pin1 indicator); the datasheet's source-to-drain body diode is rated 80A continuous. |
| 2 | S | passive | Source terminal, common with the other source pins of the N-channel MOSFET. |
| 3 | S | passive | Source terminal, common with the other source pins of the N-channel MOSFET. |
| 4 | G | input | Gate terminal with VGS rated at ±25V max and a threshold of 2V min to 4V max at ID=250μA. |
| 5 | D | passive | Drain terminal, rated 60V VDSS and 80A continuous at TC=25℃. |
| 6 | D | passive | Drain terminal, rated 60V VDSS and 80A continuous at TC=25℃. |
| 7 | D | passive | Drain terminal, rated 60V VDSS and 80A continuous at TC=25℃. |
| 8 | D | passive | Drain terminal, rated 60V VDSS and 80A continuous at TC=25℃. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | DFN-8(5x6) |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS |  |  | 60 | V |  | 1 |
| Gate-Source Voltage | VGSS | -25 |  | 25 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 80 | A | TC = 25℃ | 1 |
| Continuous Drain Current | ID |  |  | 52 | A | TC = 100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 320 | A | note1 | 1 |
| Single Pulsed Avalanche Energy | EAS |  |  | 169 | mJ | note2: TJ=25℃, VDD=30V, VG=10V, L=0.5mH, Rg=25Ω, IAS=26A | 1 |
| Power Dissipation | PD |  |  | 108 | W | TC = 25℃ | 1 |
| Operating and Storage Temperature Range | TJ, TSTG | -55 |  | 175 | ℃ |  | 1 |
| Thermal Resistance, Junction to Case | RθJC |  |  | 1.4 | /W |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=60V, VGS=0V, | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 3 | 4 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 7.2 | 8.6 | mΩ | VGS=10V, ID=30A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 80 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 320 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=30A | 2 |

## CAD (KiCad official)

- Symbol: `TMN6080NF`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN-8(5x6) (KiCad packages3D, STEP)
- 3D model files: `tmn6080nf-etched.step` / `tmn6080nf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tmn6080nf.step` / `tmn6080nf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Tritech MOS datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590906663878938624) (5 pp, sha256 `c72e7ec75f12b2a1`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tmn6080nf-datasheet.pdf)