component
TMN1004MI
Public Made by Adomby adom
Tritech MOS MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TMN1004MI
Tritech MOS · MOSFETs · SOT-23-3L
TMN1004MI from Tritech MOS, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with VGS(th) 1.0 V min, 1.8 V typ, 3.0 V max at ID=250μA. |
| 2 | S | passive | Source; body-diode continuous current is 4.0 A max and drain current is 4 A at TA=25℃. |
| 3 | D | passive | Drain; VDS is 100 V max, ID is 4 A at TA=25℃ (3.1 A at 70℃), pulsed IDM is 21 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | 100 | V | 1 | |||
| Gate-source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current | ID | 4 | A | TA=25℃ | 1 | ||
| Drain Current | ID | 3.1 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | 21 | A | 1 | |||
| Total Power Dissipation | PD | 1.2 | W | @ TA=25℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient | RθJA | 104 | ℃/ W | Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch | 1 | ||
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | 150 | ℃ | 1 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 3 | V | VDS= VGS, ID=250μA | 2 |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS= ±20V, VDS=0V | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 110 | 140 | mΩ | VGS= 10V, ID=3.0A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 160 | 200 | mΩ | VGS= 4.5V, ID=2.0A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.2 | V | IS=3.0A,VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 4 | A | 2 |
CAD (KiCad official)
- Symbol:
TMN1004MI - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
tmn1004mi-etched.step/tmn1004mi-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tmn1004mi.step/tmn1004mi.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech MOS datasheet (5 pp, sha256
c903201f7e106d2b, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TMN1004MI
**Tritech MOS** · MOSFETs · SOT-23-3L
TMN1004MI from Tritech MOS, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with VGS(th) 1.0 V min, 1.8 V typ, 3.0 V max at ID=250μA. |
| 2 | S | passive | Source; body-diode continuous current is 4.0 A max and drain current is 4 A at TA=25℃. |
| 3 | D | passive | Drain; VDS is 100 V max, ID is 4 A at TA=25℃ (3.1 A at 70℃), pulsed IDM is 21 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source Voltage | VDS | | | 100 | V | | 1 |
| Gate-source Voltage | VGS | -20 | | 20 | V | | 1 |
| Drain Current | ID | | | 4 | A | TA=25℃ | 1 |
| Drain Current | ID | | | 3.1 | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM | | | 21 | A | | 1 |
| Total Power Dissipation | PD | | | 1.2 | W | @ TA=25℃ | 1 |
| Thermal Resistance Junction-to-Ambient | RθJA | | | 104 | ℃/ W | Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch | 1 |
| Junction and Storage Temperature Range | TJ ,TSTG | -55 | | 150 | ℃ | | 1 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.8 | 3 | V | VDS= VGS, ID=250μA | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS= ±20V, VDS=0V | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 110 | 140 | mΩ | VGS= 10V, ID=3.0A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | 160 | 200 | mΩ | VGS= 4.5V, ID=2.0A | 2 |
| Diode Forward Voltage | VSD | | 0.8 | 1.2 | V | IS=3.0A,VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS | | | 4 | A | | 2 |
## CAD (KiCad official)
- Symbol: `TMN1004MI`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files: `tmn1004mi-etched.step` / `tmn1004mi-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tmn1004mi.step` / `tmn1004mi.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Tritech MOS datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590906566596386816) (5 pp, sha256 `c903201f7e106d2b`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tmn1004mi-datasheet.pdf)