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TMMBAT48FILM

STMicroelectronics · Schottky Barrier Diodes (SBD) · MiniMELF

TMMBAT48FILM from STMicroelectronics, in a MiniMELF. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	K	passive	Cathode, marked by a ring at the cathode end of the glass MiniMELF package; TMMBAT48 has VRRM of 40 V.
2	A	passive	Anode; forward continuous current up to 350 mA at Tl = 25 °C with very low turn-on voltage.

Key specifications

Parameter	Value
Manufacturer	STMicroelectronics
Package	MiniMELF
Category	Diodes
Pins	2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Max	Unit	Conditions	Page
Breakdown voltage	VBR	40		V	Tj = 25°C, IR = 25µA	2
Forward voltage	VF		0.25	V	Tj = 25°C, IF = 0.1mA, pulse tp ≤ 300µs δ < 2%	2
Forward voltage	VF		0.3	V	Tj = 25°C, IF = 1mA, pulse tp ≤ 300µs δ < 2%	2
Forward voltage	VF		0.4	V	Tj = 25°C, IF = 10mA, pulse tp ≤ 300µs δ < 2%	2
Forward voltage	VF		0.5	V	Tj = 25°C, IF = 50mA, pulse tp ≤ 300µs δ < 2%	2
Forward voltage	VF		0.75	V	Tj = 25°C, IF = 200mA, pulse tp ≤ 300µs δ < 2%	2
Forward voltage	VF		0.9	V	Tj = 25°C, IF = 500mA, pulse tp ≤ 300µs δ < 2%	2
Reverse leakage current	IR		1	µA	Tj = 25°C, VR = 1.5V	2
Reverse leakage current	IR		10	µA	Tj = 60°C, VR = 1.5V	2
Reverse leakage current	IR		2	µA	Tj = 25°C, VR = 10V	2
Reverse leakage current	IR		15	µA	Tj = 60°C, VR = 10V	2
Reverse leakage current	IR		5	µA	Tj = 25°C, VR = 20V	2
Reverse leakage current	IR		25	µA	Tj = 60°C, VR = 20V	2
Reverse leakage current	IR		50	µA	Tj = 60°C, VR = 40V	2
Capacitance	C		20	pF	Tj = 25°C, VR = 0V, f = 1MHz	2
Capacitance	C		12	pF	Tj = 25°C, VR = 1V	2
Reverse recovery time	trr		10	ns	Tj = 25°C, IF = 10mA, VR = 1V, irr = 1mA, RL = 100Ω	2
Repetitive peak reverse voltage	VRRM		40	V		1
Forward continuous current	IF		350	mA	Tl = 25 °C	1
Repetitive peak forward current	IFRM		1	A	tp ≤ 1s, δ ≤ 0.5	1
Surge non repetitive forward current	IFSM		7.5	A	tp = 10ms	1
Surge non repetitive forward current	IFSM		1.5	A	tp = 1s	1
Power dissipation	Ptot		330	mW	Tl = 25 °C	1
Storage temperature range	Tstg	-65	150	°C		1
Junction temperature range	Tj	-65	125	°C		1
Maximum soldering temperature	TL		260	°C	during 15s	1
Thermal resistance junction-leads	Rth(j-l)		300	°C/W	Junction-leads	1

CAD (KiCad official)

Symbol: TMMBAT48FILM
Footprint: Diode_SMD:D_MiniMELF
3D model: MiniMELF (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: STMicroelectronics datasheet (5 pp, sha256 f377dc72643443ba, retrieved 2026-10-22, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF