# TMCS1108A3UQDRQ1

**Texas Instruments** · Current Sensors · SOIC-8

TMCS1108A3UQDRQ1 from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | IN+ | passive | Positive input current pin, connected internally to pin 2 through the 1.8 mΩ isolated leadframe conductor; current flowing into IN+ is positive. |
| 2 | IN+ | passive | Positive input current pin, connected internally to pin 1 through the 1.8 mΩ isolated leadframe conductor; rated ±120 V absolute max relative to GND. |
| 3 | IN- | passive | Negative input current pin, connected internally to pin 4 through the 1.8 mΩ isolated leadframe conductor; rated ±120 V absolute max relative to GND. |
| 4 | IN- | passive | Negative input current pin, connected internally to pin 3 through the 1.8 mΩ isolated leadframe conductor; recommended ±100 V peak operating voltage relative to GND. |
| 5 | GND | power_in | Ground reference for the low-voltage signal chain; IN+ and IN- voltages are specified relative to this pin. |
| 6 | NC | unconnected | No connect; the pin tolerates capacitive or resistive connection to GND or VS and shorting to GND is recommended if acceptable, with 1 MΩ input impedance and abs max GND-0.3 V to VS+0.3 V. |
| 7 | VOUT | output | Analog output voltage proportional to input current (200 mV/A for A3 variant), with 1 nF max capacitive load and abs max GND-0.3 V to VS+0.3 V. |
| 8 | VS | power_in | Analog supply, operating 3 V to 5.5 V (abs max 6 V), decoupled with a 0.1 µF low-ESR capacitor to GND close to the pin. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SOIC-8 |
| Category | Sensors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Sensitivity error (25°C) |  |  | 0.4 | 1.2 | % | 0.05V ≤ VOUT ≤ VS, 0.2V, TA = 25ºC; ± as printed | 6 |
| Sensitivity error incl. lifetime and environmental drift |  |  | 0.7 | 1.8 | % | 0.05V ≤ VOUT ≤ VS, 0.2V, TA = 25ºC; ± as printed | 6 |
| Sensitivity error (-40 to 85°C) |  |  | 0.7 | 1.8 | % | 0.05V ≤ VOUT ≤ VS, 0.2V, TA = -40ºC to +85ºC; ± as printed | 6 |
| Sensitivity error (-40 to 125°C) |  |  | 0.9 | 2.25 | % | 0.05V ≤ VOUT ≤ VS, 0.2V, TA = -40ºC to +125ºC; ± as printed | 6 |
| Output voltage offset error | VOE |  | 5 | 12 | mV | TMCS1108A3U-Q1; ± as printed | 6 |
| Output voltage offset drift |  |  | 20 | 80 | µV/℃ | TMCS1108A3U-Q1, TA = -40ºC to +125ºC; ± as printed | 7 |
| Offset error, RTI | IOS |  | 25 | 60 | mA | TMCS1108A3U-Q1; ± as printed | 7 |
| Offset error temperature drift, RTI |  |  | 100 | 400 | µA/°C | TMCS1108A3U-Q1, TA = -40ºC to +125ºC; ± as printed | 7 |
| Power supply rejection ratio | PSRR |  | 1 | 6.5 | mV/V | VS = 3V to 5.5V, TA = -40ºC to +125ºC; ± as printed | 7 |
| Sensitivity |  |  | 200 |  | mV/A | TMCS1108A3U-Q1 | 6 |
| Nonlinearity error |  |  | 0.5 |  | % | VOUT = 0.5V to VS, 0.5V; ± as printed | 6 |
| Common-mode transient immunity | CMTI |  | 50 |  | kV/µs |  | 7 |
| Common-mode rejection ratio, RTI | CMRR |  | 5 |  | uA/V | DC to 60Hz | 7 |
| Zero-current VOUT | VOUT,0A |  | 0.1 |  | V/V | TMCS1108AxU-Q1, 0.1*VS | 7 |
| Junction-to-ambient thermal resistance | RθJA |  | 36.6 |  | °C/W | D (SOIC) 8-pin, on TMCS1108EVM | 5 |
| Junction-to-case (top) thermal resistance | RθJC(top) |  | 50.7 |  | °C/W | D (SOIC) 8-pin, on TMCS1108EVM | 5 |
| Junction-to-board thermal resistance | RθJB |  | 9.6 |  | °C/W | D (SOIC) 8-pin, on TMCS1108EVM | 5 |
| Junction-to-top characterization parameter | ΨJT |  | -0.1 |  | °C/W | D (SOIC) 8-pin, on TMCS1108EVM | 5 |
| Junction-to-board characterization parameter | ΨJB |  | 11.7 |  | °C/W | D (SOIC) 8-pin, on TMCS1108EVM | 5 |
| Maximum power dissipation (both sides) | PD |  | 673 |  | mW | VS = 5.5V, TA = 125℃, TJ = 150℃, on TMCS1108EVM | 5 |
| Maximum power dissipation (current input, side 1) | PD1 |  | 640 |  | mW | IIN = 16A; VS = 5.5V, TA = 125℃, TJ = 150℃, on TMCS1108EVM | 5 |
| Maximum power dissipation (side 2) | PD2 |  | 33 |  | mW | VS = 5.5V, IQ = 6mA, no VOUT load | 5 |

## CAD (KiCad official)

- Symbol: `TMCS1108A3UQDRQ1`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOIC-8 (KiCad packages3D, STEP)
- 3D model files: `tmcs1108a3uqdrq1-etched.step` / `tmcs1108a3uqdrq1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tmcs1108a3uqdrq1.step` / `tmcs1108a3uqdrq1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/lit/ds/symlink/tmcs1108a3uqdrq1.pdf) (42 pp, sha256 `9fc50849c6b5677d`, retrieved 2026-10-27, tier: manufacturer)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tmcs1108a3uqdrq1-datasheet.pdf)