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Contents

README

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TM9926A

Tritech MOS · MOSFETs · SOP-8

TM9926A from Tritech MOS, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel), drain-source rated 20V with 8.0A continuous drain current at TA=25C.
2 G1 input Gate of MOSFET 1, rated for gate-source voltage of ±12V with threshold of 0.4V to 1.0V at 250uA.
3 S2 passive Source of MOSFET 2 (N-channel), drain-source rated 20V with 8.0A continuous drain current at TA=25C.
4 G2 input Gate of MOSFET 2, rated for gate-source voltage of ±12V with threshold of 0.4V to 1.0V at 250uA.
5 D2 passive Drain of MOSFET 2, rated for 20V drain-source voltage and 25A pulsed drain current (pins 5 and 6 are both D2).
6 D2 passive Drain of MOSFET 2, rated for 20V drain-source voltage and 25A pulsed drain current (pins 5 and 6 are both D2).
7 D1 passive Drain of MOSFET 1, rated for 20V drain-source voltage and 25A pulsed drain current (pins 7 and 8 are both D1).
8 D1 passive Drain of MOSFET 1, rated for 20V drain-source voltage and 25A pulsed drain current (pins 7 and 8 are both D1).

Key specifications

Parameter Value
Manufacturer Tritech MOS
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID@TA=25℃ 8 A VGS @ 4.5V 1
Continuous Drain Current ID@TA=70℃ 4.8 A VGS @ 4.5V 1
Pulsed Drain Current IDM 25 A 1
Total Power Dissipation PD@TA=25℃ 1.65 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 78 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS =±12V 2
Gate Threshold Voltage VGS(th) 0.4 0.7 1 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 20 28 mΩ VGS=4.5V, ID=6A 2
Static Drain-Source on-Resistance RDS(on) 25.5 38 mΩ VGS=2.5V, ID=5A 2
Maximum Continuous Drain to Source Diode Forward Current IS 8 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 24 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=6A 2

CAD (KiCad official)

  • Symbol: TM9926A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: tm9926a-etched.step / tm9926a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tm9926a.step / tm9926a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tritech MOS datasheet (5 pp, sha256 ddb75120b4d241ed, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF