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Contents

README

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TM4805A

Tritech MOS · MOSFETs · SOP-8

TM4805A from Tritech MOS, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the first P-channel MOSFET; drain-source voltage rating is -30V.
2 G1 input Gate of the first P-channel MOSFET; gate-source voltage is limited to ±20V.
3 S2 passive Source of the second P-channel MOSFET; drain-source voltage rating is -30V.
4 G2 input Gate of the second P-channel MOSFET; gate-source voltage is limited to ±20V.
5 D2 passive Drain of the second P-channel MOSFET; continuous drain current is -9.8A at TC=25℃ and pulsed drain current is -40A.
6 D2 passive Drain of the second P-channel MOSFET, tied to the same drain as pin 5; continuous drain current is -9.8A at TC=25℃.
7 D1 passive Drain of the first P-channel MOSFET; continuous drain current is -9.8A at TC=25℃ and pulsed drain current is -40A.
8 D1 passive Drain of the first P-channel MOSFET, tied to the same drain as pin 7; continuous drain current is -9.8A at TC=25℃.

Key specifications

Parameter Value
Manufacturer Tritech MOS
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -30 V 1
Gate-Source Voltage VGSS -20 20 V 1
Continuous Drain Current ID -9.8 A TC = 25℃ 1
Continuous Drain Current ID -8 A TC = 100℃ 1
Pulsed Drain Current IDM -40 A Repetitive rating, note 1 1
Power Dissipation PD 3.7 W TA = 25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance, Junction to Ambient RθJA 33.8 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS -30 V VGS=0V, ID= -250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS= -30V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS= ±20V 2
Gate Threshold Voltage VGS(th) -1 -1.5 -2.5 V VDS=VGS, ID= -250μA 2
Static Drain-Source on-Resistance RDS(on) 12 23 mΩ VGS= -10V, ID= -10A 2
Static Drain-Source on-Resistance RDS(on) 22 27 mΩ VGS= -4.5V, ID= -5A 2
Maximum Continuous Drain to Source Diode Forward Current IS -9.8 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM -40 A 2
Drain to Source Diode Forward Voltage VSD -0.8 -1.2 V VGS=0V, IS= -15A 2

CAD (KiCad official)

  • Symbol: TM4805A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: tm4805a-etched.step / tm4805a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tm4805a.step / tm4805a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tritech MOS datasheet (6 pp, sha256 388021b3ef38d21b, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF