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TM4017NF
Public Made by Adomby adom
Tritech-MOS MOSFETs, DFN5x6-8L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTM4017NF
Tritech-MOS · MOSFETs · DFN5x6-8L
TM4017NF from Tritech-MOS, in a DFN5x6-8L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel per the datasheet's channel ordering), rated VDSS 40V and ID 20A at TC=25C. |
| 2 | G1 | input | Gate of MOSFET 1 (N-channel), absolute maximum VGSS ±20V with threshold 1.0 to 2.5V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel per the datasheet's channel ordering), rated VDSS -40V and ID -20A at TC=25C. |
| 4 | G2 | input | Gate of MOSFET 2 (P-channel), absolute maximum VGSS ±20V with threshold -1.0 to -2.5V. |
| 5 | D2 | passive | Drain of MOSFET 2 (P-channel), VDSS -40V, pulsed drain current IDM -64A; shorted to pin 6 and the D2 exposed pad. |
| 6 | D2 | passive | Drain of MOSFET 2 (P-channel), VDSS -40V, pulsed drain current IDM -64A; shorted to pin 5 and the D2 exposed pad. |
| 7 | D1 | passive | Drain of MOSFET 1 (N-channel), VDSS 40V, pulsed drain current IDM 64A; shorted to pin 8 and the D1 exposed pad. |
| 8 | D1 | passive | Drain of MOSFET 1 (N-channel), VDSS 40V, pulsed drain current IDM 64A; shorted to pin 7 and the D1 exposed pad. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech-MOS |
| Package | DFN5x6-8L |
| Category | Transistors/Thyristors |
| Pins | 9 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-Ch Drain-Source Voltage | VDSS | 40 | V | TC=25℃, N-channel | 1 | ||
| P-Ch Drain-Source Voltage | VDSS | -40 | V | TC=25℃, P-channel | 1 | ||
| N-Ch Gate-Source Voltage | VGSS | -20 | 20 | V | N-channel | 1 | |
| P-Ch Gate-Source Voltage | VGSS | -20 | 20 | V | P-channel | 1 | |
| N-Ch Continuous Drain Current | ID | 20 | A | TC=25℃, N-channel | 1 | ||
| P-Ch Continuous Drain Current | ID | -20 | A | TC=25℃, P-channel | 1 | ||
| N-Ch Continuous Drain Current | ID | 10 | A | TC=100℃, N-channel | 1 | ||
| P-Ch Continuous Drain Current | ID | -10 | A | TC=100℃, P-channel | 1 | ||
| N-Ch Pulsed Drain Current | IDM | 64 | A | N-channel, note1 | 1 | ||
| P-Ch Pulsed Drain Current | IDM | -64 | A | P-channel, note1 | 1 | ||
| N-Ch Single Pulsed Avalanche Energy | EAS | 19 | mJ | N-channel, note2 | 1 | ||
| P-Ch Single Pulsed Avalanche Energy | EAS | 27.5 | mJ | P-channel, note2 | 1 | ||
| N-Ch Power Dissipation | PD | 9.6 | W | TC=25℃, N-channel | 1 | ||
| P-Ch Power Dissipation | PD | 22 | W | TC=25℃, P-channel | 1 | ||
| Operating and Storage Temperature Range | TJ, TSTG | -55 | 150 | ℃ | 1 | ||
| N-Ch Thermal Resistance, Junction to Case | RθJA | 13 | ℃/W | N-channel | 1 | ||
| P-Ch Thermal Resistance, Junction to Case | RθJA | 5.7 | ℃/W | P-channel | 1 | ||
| N-Ch Drain-Source Breakdown Voltage | V(BR)DSS | 40 | V | VGS=0V, ID=250μA | 2 | ||
| N-Ch Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=40V, VGS=0V | 2 | ||
| N-Ch Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| N-Ch Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| N-Ch Static Drain-Source On-Resistance | RDS(on) | 17 | 24 | mΩ | VGS=10V, ID=8A | 2 | |
| N-Ch Static Drain-Source On-Resistance | RDS(on) | 25 | 35 | mΩ | VGS=4.5V, ID=5A | 2 | |
| N-Ch Maximum Continuous Diode Forward Current | IS | 20 | A | 2 | |||
| N-Ch Maximum Pulsed Diode Forward Current | ISM | 32 | A | 2 | |||
| N-Ch Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=8A | 2 | ||
| P-Ch Drain-Source Breakdown Voltage | V(BR)DSS | -40 | V | VGS=0V, ID=-250μA | 3 | ||
| P-Ch Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-40V, VGS=0V | 3 | ||
| P-Ch Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 3 | |
| P-Ch Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VDS=VGS, ID=-250μA | 3 |
| P-Ch Static Drain-Source On-Resistance | RDS(on) | 33 | 52 | mΩ | VGS=-10V, ID=-8A | 3 | |
| P-Ch Static Drain-Source On-Resistance | RDS(on) | 45 | 70 | mΩ | VGS=-4.5V, ID=-5A | 3 | |
| P-Ch Maximum Continuous Diode Forward Current | IS | -20 | A | 3 | |||
| P-Ch Maximum Pulsed Diode Forward Current | ISM | -64 | A | 3 | |||
| P-Ch Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS=0V, IS=-16A | 3 |
CAD (KiCad official)
- Symbol:
TM4017NF - Footprint:
Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm - 3D model: DFN5x6-8L (KiCad packages3D, STEP)
- 3D model files:
tm4017nf-etched.step/tm4017nf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tm4017nf.step/tm4017nf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech-MOS datasheet (8 pp, sha256
f561fe7c406c81ca, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).