component
TM10V03S
Public Made by Adomby adom
Tritech MOS MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTM10V03S
Tritech MOS · MOSFETs · SOP-8
TM10V03S from Tritech MOS, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of P-channel MOSFET 1; VDS rated -30V and body diode continuous current up to -9.8A. |
| 2 | G1 | input | Gate of P-channel MOSFET 1; absolute maximum VGS of ±20V with threshold of -1.0V to -2.5V. |
| 3 | S2 | passive | Source of P-channel MOSFET 2; VDS rated -30V and body diode continuous current up to -9.8A. |
| 4 | G2 | input | Gate of P-channel MOSFET 2; absolute maximum VGS of ±20V with threshold of -1.0V to -2.5V. |
| 5 | D2 | passive | Drain of P-channel MOSFET 2; continuous drain current -9.8A at TC=25°C and pulsed -40A. |
| 6 | D2 | passive | Drain of P-channel MOSFET 2, internally common with pin 5; continuous drain current -9.8A at TC=25°C and pulsed -40A. |
| 7 | D1 | passive | Drain of P-channel MOSFET 1; continuous drain current -9.8A at TC=25°C and pulsed -40A. |
| 8 | D1 | passive | Drain of P-channel MOSFET 1, internally common with pin 7; continuous drain current -9.8A at TC=25°C and pulsed -40A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VDS=VGS, ID= -250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 12 | 21 | mΩ | VGS= -10V, ID= -10A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 22 | 27 | mΩ | VGS= -4.5V, ID= -5A | 2 | |
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID= -250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS= -30V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±20V | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -9.8 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -40 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | -0.8 | -1.2 | V | VGS=0V, IS= -15A | 2 | |
| Drain-Source Voltage | VDS | -30 | V | TA = 25°C unless otherwise noted | 1 | ||
| Continuous Drain Current, -VGS @ -10V (TC=100℃) | ID@TC=100℃ | -6.2 | A | -VGS @ -10V | 1 | ||
| Pulsed Drain Current | IDM | -40 | A | 1 | |||
| Total Power Dissipation (TA=25℃) | PD@TA=25℃ | 3.7 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 85 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 36 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
TM10V03S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
tm10v03s-etched.step/tm10v03s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tm10v03s.step/tm10v03s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech MOS datasheet (5 pp, sha256
00cb10baebbb3e13, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).