component
TM10N02S
Public Made by Adomby adom
Tritech MOS MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTM10N02S
Tritech MOS · MOSFETs · SOP-8
TM10N02S from Tritech MOS, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates the body-diode continuous source current IS at 10 A maximum. |
| 2 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates the body-diode continuous source current IS at 10 A maximum. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the datasheet rates the body-diode continuous source current IS at 10 A maximum. |
| 4 | G | input | Gate terminal; the datasheet rates the gate-source voltage VGS at ±12 V. |
| 5 | D | passive | Drain terminal; the datasheet rates the drain-source voltage VDS at 20 V and continuous drain current ID at 10 A (TA = 25°C). |
| 6 | D | passive | Drain terminal; the datasheet rates the drain-source voltage VDS at 20 V and continuous drain current ID at 10 A (TA = 25°C). |
| 7 | D | passive | Drain terminal; the datasheet rates the drain-source voltage VDS at 20 V and continuous drain current ID at 10 A (TA = 25°C). |
| 8 | D | passive | Drain terminal; the datasheet rates the drain-source voltage VDS at 20 V and continuous drain current ID at 10 A (TA = 25°C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 20 | V | 1 | |||
| Gate-Source Voltage | VGS | -12 | 12 | V | 1 | ||
| Continuous Drain Current | ID | 10 | A | TA = 25°C | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Power Dissipation | PD | 2.25 | W | TA = 25°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance from Junction to Ambient | RθJA | 90 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | 20 | V | VGS = 0 V, ID = 250µA | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = ±12V, VDS = 0 V | 2 | |
| Drain Cut-off Current | IDSS | 1 | µA | VDS = 20V, VGS = 0 V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 0.45 | 0.7 | 1 | V | VGS = VDS, ID = 250µA | 2 |
| Drain-Source On-State Resistance | RDS(on) | 12 | 15 | mΩ | VGS = 4.5V, ID = 5A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 17 | 21 | mΩ | VGS = 2.5V, ID = 4.7A | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 28 | 50 | mΩ | VGS = 1.8V, ID = 4.3A | 2 | |
| Body Diode Voltage | VSD | 1.2 | V | IS = 4A, VGS = 0V | 2 | ||
| Continuous Source Current | IS | 10 | A | 2 |
CAD (KiCad official)
- Symbol:
TM10N02S - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
tm10n02s-etched.step/tm10n02s-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tm10n02s.step/tm10n02s.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech MOS datasheet (5 pp, sha256
f1246e7f4e46f6d1, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).