component

TM10N02MI

Public Made by Adom

by adom

Tritech MOS MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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tm10n02mi-etched.step tm10n02mi: factory component page (tier=lcsc) · Ray 1h ago
tm10n02mi-hero.glb tm10n02mi: hero GLB from the etched model (keeps the MPN mark) · Ray 1h ago
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tm10n02mi.glb Publish 0.1.0 · Ray 1h ago
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TM10N02MI

Tritech MOS · MOSFETs · SOT-23-3L

TM10N02MI from Tritech MOS, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±12V with a threshold of 0.5V min to 1.2V max (VDS=VGS, ID=250μA).
2 S passive Source; continuous drain current of 9.8A at TA=25℃ and body diode forward current up to 9.8A.
3 D passive Drain; drain-source voltage rated 20V and pulsed drain current 32A.

Key specifications

Parameter Value
Manufacturer Tritech MOS
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 20 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID@TA=25℃ 9.8 A TA=25℃, VGS @ 4.5V 1
Continuous Drain Current ID@TA=70℃ 6.2 A TA=70℃, VGS @ 4.5V 1
Pulsed Drain Current IDM 32 A 1
Total Power Dissipation PD@TA=25℃ 2 W TA=25℃ 1
Total Power Dissipation PD@TA=70℃ 0.66 W TA=70℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 120 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS 20 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=20V, VGS=0V, 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS =±12V 2
Gate Threshold Voltage VGS(th) 0.5 0.7 1.2 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 11 14 mΩ VGS=4.5V, ID=8A 2
Static Drain-Source on-Resistance RDS(on) 16 22.5 mΩ VGS=2.5V, ID=5A 2
Maximum Continuous Drain to Source Diode Forward Current IS 9.8 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 32 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=8A 2

CAD (KiCad official)

  • Symbol: TM10N02MI
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: tm10n02mi-etched.step / tm10n02mi-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tm10n02mi.step / tm10n02mi.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tritech MOS datasheet (7 pp, sha256 1c695d4c61d50a87, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF