# TM10H03S

**Tritech-MOS** · MOSFETs · SOP-8

TM10H03S from Tritech-MOS, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel); drain-source voltage rated 30V. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage rated ±20V, threshold 1.0 to 2.5V. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel); drain-source voltage rated 30V. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage rated ±20V, threshold 1.0 to 2.5V. |
| 5 | D2 | passive | Drain of MOSFET 2; continuous drain current 9.6A at TA=25°C, VDS 30V. |
| 6 | D2 | passive | Drain of MOSFET 2, internally common with the other D2 pin; continuous drain current 9.6A at TA=25°C. |
| 7 | D1 | passive | Drain of MOSFET 1; continuous drain current 9.6A at TA=25°C, VDS 30V. |
| 8 | D1 | passive | Drain of MOSFET 1, internally common with the other D1 pin; continuous drain current 9.6A at TA=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Tritech-MOS |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID@TA=25℃ |  |  | 9.6 | A | VGS @ 10V | 1 |
| Continuous Drain Current | ID@TA=70℃ |  |  | 5.8 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM |  |  | 37 | A |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 12.1 | mJ |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 2.8 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Case | R |  |  | 46 | ℃/W |  | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 30 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=30V, VGS = 0V, | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS = ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 15 | 20 | mΩ | VGS=10V, ID=5A | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 21 | 29 | mΩ | VGS=4.5V, ID=3A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | 9.6 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 36 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=9A | 2 |

## CAD (KiCad official)

- Symbol: `TM10H03S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `tm10h03s-etched.step` / `tm10h03s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tm10h03s.step` / `tm10h03s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Tritech-MOS datasheet](docs/tm10h03s-datasheet.pdf) (5 pp, sha256 `e94a52f785ed6b97`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tm10h03s-datasheet.pdf)