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TM08H10S

Public Made by Adom

by adom

Tritech MOS MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TM08H10S

Tritech MOS · MOSFETs · SOP-8

TM08H10S from Tritech MOS, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel, pin 1 marked by dot), VDS rated 100V.
2 G1 input Gate of MOSFET 1, gate-source voltage limited to ±20V with VGS(th) 1.0V min to 2.5V max.
3 S2 passive Source of MOSFET 2 (N-channel), VDS rated 100V.
4 G2 input Gate of MOSFET 2, gate-source voltage limited to ±20V with VGS(th) 1.0V min to 2.5V max.
5 D2 passive Drain of MOSFET 2, 100V drain-source rating with 8A continuous drain current at TC=25°C.
6 D2 passive Drain of MOSFET 2, 100V drain-source rating with 8A continuous drain current at TC=25°C.
7 D1 passive Drain of MOSFET 1, 100V drain-source rating with 8A continuous drain current at TC=25°C.
8 D1 passive Drain of MOSFET 1, 100V drain-source rating with 8A continuous drain current at TC=25°C.

Key specifications

Parameter Value
Manufacturer Tritech MOS
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 88 105 mΩ VGS=10V, ID=3A 2
Static Drain-Source on-Resistance RDS(on) 100 128 mΩ VGS=4.5V, ID=2A 2
Maximum Continuous Drain to Source Diode Forward Current IS 3 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 8 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=3A 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TC=25℃ 8 A VGS @ 10V 1
Continuous Drain Current ID@TC=100℃ 5 A VGS @ 10V 1
Pulsed Drain Current IDM 15 A 1
Single Pulse Avalanche Energy EAS 6.1 mJ 1
Total Power Dissipation PD@TA=25℃ 5 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 125 ℃/W 1
Thermal Resistance Junction-Case RθJC 3.6 ℃/W 1

CAD (KiCad official)

  • Symbol: TM08H10S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: tm08h10s-etched.step / tm08h10s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tm08h10s.step / tm08h10s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tritech MOS datasheet (5 pp, sha256 db25880b9142c2e8, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF