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TM07H03S

Public Made by Adom

by adom

Tritech MOS MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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TM07H03S

Tritech MOS · MOSFETs · SOP-8

TM07H03S from Tritech MOS, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of N-channel MOSFET 1 (VDS max 30V, continuous drain current 6.0A at TA=25℃).
2 G1 input Gate of N-channel MOSFET 1 (VGS max ±20V, threshold 1.0 to 2.5V).
3 S2 passive Source of N-channel MOSFET 2 (VDS max 30V, continuous drain current 6.0A at TA=25℃).
4 G2 input Gate of N-channel MOSFET 2 (VGS max ±20V, threshold 1.0 to 2.5V).
5 D2 passive Drain of N-channel MOSFET 2 (VDS max 30V, pulsed drain current 23.4A), tied with pin 6.
6 D2 passive Drain of N-channel MOSFET 2 (VDS max 30V, pulsed drain current 23.4A), tied with pin 5.
7 D1 passive Drain of N-channel MOSFET 1 (VDS max 30V, pulsed drain current 23.4A), tied with pin 8.
8 D1 passive Drain of N-channel MOSFET 1 (VDS max 30V, pulsed drain current 23.4A), tied with pin 7.

Key specifications

Parameter Value
Manufacturer Tritech MOS
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID@TA=25℃ 6 A VGS @ 10V 1
Continuous Drain Current ID@TA=70℃ 4.2 A VGS @ 10V 1
Pulsed Drain Current IDM 23.4 A 1
Total Power Dissipation PD@TA=25℃ 1.5 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-ambient RθJA 85 ℃/W 1
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS =30V, VGS = 0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS =0V, VGS = ±20V 2
Gate Threshold Voltage VGS(th) 1 1.5 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 20 32 mΩ VGS=10V, ID=5.5A 2
Static Drain-Source on-Resistance RDS(on) 28 37 mΩ VGS=4.5V, ID=4.5A 2
Maximum Continuous Drain to Source Diode Forward Current IS 6.8 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 23.2 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS = 0V, IS=5.8A 2

CAD (KiCad official)

  • Symbol: TM07H03S
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: tm07h03s-etched.step / tm07h03s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tm07h03s.step / tm07h03s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tritech MOS datasheet (5 pp, sha256 d4be0313cd2499b3, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF