# TM06N02MI

**Tritech MOS** · MOSFETs · SOT-23-3L

TM06N02MI from Tritech MOS, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limited to ±12 V, threshold 0.4 V min to 1 V max at VDS=VGS, ID=250μA. |
| 2 | S | passive | Source; continuous drain current 6.2 A at TA=25℃ and body diode forward voltage up to 1.2 V at IS=4A. |
| 3 | D | passive | Drain; drain-source voltage rated 20 V, pulsed drain current 22.5 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current | ID@TA=25℃ |  |  | 6.2 | A | VGS @ 4.5V, TA=25℃ | 1 |
| Continuous Drain Current | ID@TA=100℃ |  |  | 4 | A | VGS @ 4.5V, TA=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | 48 | A |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Total Power Dissipation | PD@TA=25℃ |  |  | 1 | W | TA=25℃ | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 20 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | μA | VDS=20V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS =±12V | 2 |
| Gate Threshold Voltage | VGS(th) | 0.4 | 0.7 | 1 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 19 | 24 | mΩ | VGS=4.5V, ID=4A | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 25 | 41 | mΩ | VGS=2.5V, ID=3A | 2 |
| Drain to Source Diode Forward Voltage | VSD |  |  | 1.2 | V | VGS=0V, IS=4A | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | 22.5 | A |  | 2 |

## CAD (KiCad official)

- Symbol: `TM06N02MI`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files: `tm06n02mi-etched.step` / `tm06n02mi-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tm06n02mi.step` / `tm06n02mi.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Tritech MOS datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590906512384872448) (7 pp, sha256 `0d97a6fd1be63f1b`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tm06n02mi-datasheet.pdf)