# TM06G06S

**Tritech MOS** · MOSFETs · SOP-8

TM06G06S from Tritech MOS, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1, at pin 1 of the SOP-8L; rated VDS 60 V (N-channel) or -60 V (P-channel) with VGS ±20 V. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage limited to ±20 V. |
| 3 | S2 | passive | Source of MOSFET 2; rated VDS 60 V (N-channel) or -60 V (P-channel) with VGS ±20 V. |
| 4 | G2 | input | Gate of MOSFET 2; gate-source voltage limited to ±20 V. |
| 5 | D2 | passive | Drain of MOSFET 2, tied to pin 6; continuous drain current 6.0 A (N-channel) or -5.0 A (P-channel) at TA=25°C. |
| 6 | D2 | passive | Drain of MOSFET 2, tied to pin 5; continuous drain current 6.0 A (N-channel) or -5.0 A (P-channel) at TA=25°C. |
| 7 | D1 | passive | Drain of MOSFET 1, tied to pin 8; continuous drain current 6.0 A (N-channel) or -5.0 A (P-channel) at TA=25°C. |
| 8 | D1 | passive | Drain of MOSFET 1, tied to pin 7; continuous drain current 6.0 A (N-channel) or -5.0 A (P-channel) at TA=25°C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Channel) | VDS |  |  | 60 | V |  | 1 |
| Drain-Source Voltage (P-Channel) | VDS | -60 |  |  | V |  | 1 |
| Gate-Source Voltage (N-Channel) | VGS | -20 |  | 20 | V |  | 1 |
| Gate-Source Voltage (P-Channel) | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current (N-Channel) | ID@TA=25℃ |  |  | 6 | A | VGS @ 10V, TA=25℃ | 1 |
| Continuous Drain Current (P-Channel) | ID@TA=25℃ | -5 |  |  | A | VGS @ 10V, TA=25℃ | 1 |
| Continuous Drain Current (N-Channel) | ID@TA=70℃ |  |  | 4 | A | VGS @ 10V, TA=70℃ | 1 |
| Continuous Drain Current (P-Channel) | ID@TA=70℃ | -3.5 |  |  | A | VGS @ 10V, TA=70℃ | 1 |
| Pulsed Drain Current (N-Channel) | IDM |  |  | 18 | A |  | 1 |
| Pulsed Drain Current (P-Channel) | IDM | -14 |  |  | A |  | 1 |
| Single Pulse Avalanche Energy (N-Channel, column 1 of printed pair) | EAS |  |  | 22.5 | mJ |  | 1 |
| Single Pulse Avalanche Energy (P-Channel, column 2 of printed pair) | EAS |  |  | 35.3 | mJ |  | 1 |
| Avalanche Current (N-Channel) | IAS |  |  | 22.6 | A |  | 1 |
| Avalanche Current (P-Channel) | IAS | -16.6 |  |  | A |  | 1 |
| Total Power Dissipation (N-Channel) | PD@TA=25℃ |  |  | 2.5 | W | TA=25℃ | 1 |
| Total Power Dissipation (P-Channel) | PD@TA=25℃ |  |  | 2.5 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 62.5 | ℃/W | Note 1 | 1 |
| Drain-Source Breakdown Voltage (N-Channel) | V(BR)DSS | 60 |  |  | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS |  |  | 1 | μA | VDS=60V, VGS=0V | 2 |
| Gate to Body Leakage Current (N-Channel) | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage (N-Channel) | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance (N-Channel) | RDS(on) |  | 30 | 35 | mΩ | VGS=10V, ID=5A | 2 |
| Static Drain-Source on-Resistance (N-Channel) | RDS(on) |  | 36 | 45 | mΩ | VGS=4.5V, ID=3A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current (N-Channel) | IS |  |  | 6 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current (N-Channel) | ISM |  |  | 20 | A |  | 2 |
| Drain to Source Diode Forward Voltage (N-Channel) | VSD |  |  | 1.2 | V | VGS=0V, IS=5A | 2 |
| Drain-Source Breakdown Voltage (P-Channel) | BVDSS | -60 |  |  | V | VGS=0V, ID=-250uA | 3 |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -1 | -1.6 | -2.5 | V | VGS=VDS, ID=-250uA | 3 |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) |  | 70 | 80 | mΩ | VGS=-10V, ID=-3.5A | 3 |
| Static Drain-Source On-Resistance (P-Channel) | RDS(ON) |  | 81 | 95 | mΩ | VGS=-4.5V, ID=-3.1A | 3 |
| Drain-Source Leakage Current (P-Channel) | IDSS |  |  | 1 | uA | VDS=-48V, VGS=0V, TJ=25℃ | 3 |
| Drain-Source Leakage Current (P-Channel) | IDSS |  |  | 5 | uA | VDS=-48V, VGS=0V, TJ=55℃ | 3 |
| Gate-Source Leakage Current (P-Channel) | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Continuous Source Current (P-Channel) | IS |  |  | -5 | A | VG=VD=0V, Force Current | 3 |
| Diode Forward Voltage (P-Channel) | VSD |  |  | -1.2 | V | VGS=0V, IS=-1A, TJ=25℃ | 3 |

## CAD (KiCad official)

- Symbol: `TM06G06S`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `tm06g06s-etched.step` / `tm06g06s-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tm06g06s.step` / `tm06g06s.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Tritech MOS datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8602998695739088897) (10 pp, sha256 `b378cafa6a70f60f`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tm06g06s-datasheet.pdf)