# TM05P04MI

**Tritech MOS** · MOSFETs · SOT-23-3L

TM05P04MI from Tritech MOS, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls the P-channel MOSFET with VGS rated ±20 V and threshold VGS(th) of -1.0 to -2.5 V at ID=-250µA. |
| 2 | S | passive | Source; body-diode anode side, continuous source-drain diode current up to -5.4 A. |
| 3 | D | passive | Drain; rated VDS of -40 V with continuous drain current of -5.4 A at TA=25℃. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -40 |  |  | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current @TA=25℃ | ID | -5.4 |  |  | A | TA=25℃ | 1 |
| Continuous Drain Current @TA=70℃ | ID | -3.5 |  |  | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM | -20 |  |  | A |  | 1 |
| Total Power Dissipation @TA=25℃ | PD |  |  | 2 | W | TA=25℃ | 1 |
| Total Power Dissipation @TA=70℃ | PD |  |  | 1.5 | W | TA=70℃ | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 65 | ℃/W |  | 1 |
| Thermal Resistance Junction-Ambient (t ≤10s) | RθJA |  |  | 48 | ℃/W | t ≤10s | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -40 |  |  | V | VGS=0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-40V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 |  | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -2.5 | V | VDS=VGS, ID=-250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 45 | 54 | mΩ | VGS=-10V, ID=-5A | 2 |
| Static Drain-Source on-Resistance | RDS(on) |  | 55 | 68 | mΩ | VGS=-4.5V, ID=-4A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS |  |  | -5.4 | A |  | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM |  |  | -22 | A |  | 2 |
| Drain to Source Diode Forward Voltage | VSD |  | -0.8 | -1.2 | V | VGS=0V, IS=-5.5A | 2 |

## CAD (KiCad official)

- Symbol: `TM05P04MI`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files: `tm05p04mi-etched.step` / `tm05p04mi-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tm05p04mi.step` / `tm05p04mi.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Tritech MOS datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590906579925614592) (7 pp, sha256 `13812c212d914de0`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tm05p04mi-datasheet.pdf)