component
TM05N10MI
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Tritech MOS MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TM05N10MI
Tritech MOS · MOSFETs · SOT-23-3L
TM05N10MI from Tritech MOS, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±20 V, with a threshold VGS(th) of 1.0 to 2.5 V at ID=250μA. |
| 2 | S | passive | Source; continuous source (body diode) current is 10 A max, and the drain current rating is 5.0 A at TA=25℃. |
| 3 | D | passive | Drain; drain-source voltage is rated 100 V, with pulsed drain current of 20 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | 107 | V | VGS=0V, ID=250μA | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=100V, VGS=0V | 2 | ||
| Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS=±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | 105 | 125 | mΩ | VGS=10V, ID=10A | 2 | |
| Static Drain-Source on-Resistance | RDS(on) | 135 | mΩ | VGS=4.5V, ID=8A | 2 | ||
| Continuous Source Current | IS | 10 | A | VG=VD=0V, Force Current | 2 | ||
| Pulsed Source Current | ISM | 40 | A | 2 | |||
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=10A | 2 | ||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current at TA=25℃ | ID@TA=25℃ | 5 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current at TA=70℃ | ID@TA=70℃ | 4.6 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Total Power Dissipation at TA=25℃ | PD@TA=25℃ | 1.5 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 135 | ℃/W | steady state, surface mounted on 1 inch2 FR-4 board with 2OZ copper | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 85 | ℃/W | t<10s | 1 |
CAD (KiCad official)
- Symbol:
TM05N10MI - Footprint:
Package_TO_SOT_SMD:SOT-23-3 - 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files:
tm05n10mi-etched.step/tm05n10mi-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tm05n10mi.step/tm05n10mi.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech MOS datasheet (5 pp, sha256
fe1b5692058fd7bb, retrieved 2026-10-16, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TM05N10MI
**Tritech MOS** · MOSFETs · SOT-23-3L
TM05N10MI from Tritech MOS, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is rated ±20 V, with a threshold VGS(th) of 1.0 to 2.5 V at ID=250μA. |
| 2 | S | passive | Source; continuous source (body diode) current is 10 A max, and the drain current rating is 5.0 A at TA=25℃. |
| 3 | D | passive | Drain; drain-source voltage is rated 100 V, with pulsed drain current of 20 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOT-23-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | 107 | | V | VGS=0V, ID=250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=100V, VGS=0V | 2 |
| Gate to Body Leakage Current | IGSS | -100 | | 100 | nA | VDS=0V, VGS=±20V | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | 105 | 125 | mΩ | VGS=10V, ID=10A | 2 |
| Static Drain-Source on-Resistance | RDS(on) | | | 135 | mΩ | VGS=4.5V, ID=8A | 2 |
| Continuous Source Current | IS | | | 10 | A | VG=VD=0V, Force Current | 2 |
| Pulsed Source Current | ISM | | | 40 | A | | 2 |
| Diode Forward Voltage | VSD | | | 1.2 | V | VGS=0V, IS=10A | 2 |
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current at TA=25℃ | ID@TA=25℃ | | | 5 | A | VGS @ 10V | 1 |
| Continuous Drain Current at TA=70℃ | ID@TA=70℃ | | | 4.6 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 20 | A | | 1 |
| Total Power Dissipation at TA=25℃ | PD@TA=25℃ | | | 1.5 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance Junction-ambient | RθJA | | 135 | | ℃/W | steady state, surface mounted on 1 inch2 FR-4 board with 2OZ copper | 1 |
| Thermal Resistance Junction-ambient | RθJA | | 85 | | ℃/W | t<10s | 1 |
## CAD (KiCad official)
- Symbol: `TM05N10MI`
- Footprint: `Package_TO_SOT_SMD:SOT-23-3`
- 3D model: SOT-23-3L (KiCad packages3D, STEP)
- 3D model files: `tm05n10mi-etched.step` / `tm05n10mi-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tm05n10mi.step` / `tm05n10mi.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Tritech MOS datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590906511990607872) (5 pp, sha256 `fe1b5692058fd7bb`, retrieved 2026-10-16, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tm05n10mi-datasheet.pdf)