component
TM05G03HMI6
Public Made by Adomby adom
Tritech-MOS MOSFETs, SOT-23-6L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTM05G03HMI6
Tritech-MOS · MOSFETs · SOT-23-6L
TM05G03HMI6 from Tritech-MOS, in a SOT-23-6L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (Q1); gate-source voltage limited to ±20V. |
| 2 | S2 | passive | Source of the P-channel MOSFET (Q2); VDS rated -30V, continuous drain current -4.0A at TC=25℃. |
| 3 | G2 | input | Gate of the P-channel MOSFET (Q2); gate-source voltage limited to ±20V. |
| 4 | D2 | passive | Drain of the P-channel MOSFET (Q2); VDS rated -30V, pulsed drain current -22A. |
| 5 | S1 | passive | Source of the N-channel MOSFET (Q1); VDS rated 30V, continuous drain current 4A at TC=25℃. |
| 6 | D1 | passive | Drain of the N-channel MOSFET (Q1); VDS rated 30V, pulsed drain current 20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech-MOS |
| Package | SOT-23-6L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| N-ch Drain-Source Voltage | VDS | 30 | V | TA=25℃ | 1 | ||
| P-ch Drain-Source Voltage | VDS | -30 | V | TA=25℃ | 1 | ||
| N-ch Gate-Source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| P-ch Gate-Source Voltage | VGS | -20 | 20 | V | TA=25℃ | 1 | |
| N-ch Continuous Drain Current | ID | 4 | A | TC=25℃, VGS @ 10V | 1 | ||
| P-ch Continuous Drain Current | ID | -4 | A | TC=25℃, VGS @ 10V | 1 | ||
| N-ch Continuous Drain Current | ID | 2 | A | TC=100℃, VGS @ 10V | 1 | ||
| P-ch Continuous Drain Current | ID | -2.5 | A | TC=100℃, VGS @ 10V | 1 | ||
| N-ch Pulsed Drain Current | IDM | 20 | A | 1 | |||
| P-ch Pulsed Drain Current | IDM | -22 | A | 1 | |||
| N-ch Single Pulse Avalanche Energy | EAS | 72 | mJ | 1 | |||
| P-ch Single Pulse Avalanche Energy | EAS | 79 | mJ | 1 | |||
| N-ch Avalanche Current | IAS | 21 | A | 1 | |||
| P-ch Avalanche Current | IAS | -21 | A | 1 | |||
| N-ch Total Power Dissipation | PD | 1.5 | W | TC=25℃ | 1 | ||
| P-ch Total Power Dissipation | PD | 2.08 | W | TC=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-Ambient | RθJA | 85 | ℃/W | note 1 | 1 | ||
| Thermal Resistance Junction-Case | RθJC | 50 | ℃/W | note 1 | 1 | ||
| N-ch Drain-Source Breakdown Voltage | V(BR)DSS | 30 | V | VGS=0V, ID=250μA | 2 | ||
| N-ch Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=30V, VGS=0V | 2 | ||
| N-ch Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±20V | 2 | |
| N-ch Gate Threshold Voltage | VGS(th) | 1 | 1.5 | 2.5 | V | VDS=VGS, ID=250μA | 2 |
| N-ch Static Drain-Source on-Resistance | RDS(on) | 29 | 38 | mΩ | VGS=10V, ID=4A | 2 | |
| N-ch Static Drain-Source on-Resistance | RDS(on) | 45 | 65 | mΩ | VGS=4.5V, ID=3A | 2 | |
| N-ch Maximum Continuous Drain to Source Diode Forward Current | IS | 4 | A | 2 | |||
| N-ch Maximum Pulsed Drain to Source Diode Forward Current | ISM | 16 | A | 2 | |||
| N-ch Drain to Source Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, IS=4A | 2 | ||
| P-ch Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | VGS=0V, ID= -250μA | 3 | ||
| P-ch Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS= -20V, VGS=0V | 3 | ||
| P-ch Gate to Body Leakage Current | IGSS | -100 | 100 | nA | VDS=0V, VGS= ±12V | 3 | |
| P-ch Gate Threshold Voltage | VGS(th) | -1 | -1.5 | -2.5 | V | VDS=VGS, ID= -250μA | 3 |
| P-ch Static Drain-Source on-Resistance | RDS(on) | 53 | 65 | mΩ | VGS= -4.5V, ID= -3A | 3 | |
| P-ch Static Drain-Source on-Resistance | RDS(on) | 75 | mΩ | VGS= -2.5V, ID= -2A | 3 | ||
| P-ch Maximum Continuous Drain to Source Diode Forward Current | IS | -4 | A | 3 | |||
| P-ch Maximum Pulsed Drain to Source Diode Forward Current | ISM | -12 | A | 3 | |||
| P-ch Drain to Source Diode Forward Voltage | VSD | -1.2 | V | VGS=0V, IS= -3A | 3 |
CAD (KiCad official)
- Symbol:
TM05G03HMI6 - Footprint:
Package_TO_SOT_SMD:SOT-23-6 - 3D model: SOT-23-6L (KiCad packages3D, STEP)
- 3D model files:
tm05g03hmi6-etched.step/tm05g03hmi6-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tm05g03hmi6.step/tm05g03hmi6.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech-MOS datasheet (9 pp, sha256
4cb0458a528c7bbf, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).