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TM04N10MI

Public Made by Adom

by adom

Tritech MOS MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 23d ago
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tm04n10mi-etched.glb Publish 0.1.0 · Ray 23d ago
tm04n10mi-etched.step tm04n10mi: factory component page (tier=lcsc) · Ray 23d ago
tm04n10mi-hero.glb tm04n10mi: hero GLB from the etched model (keeps the MPN mark) · Ray 23d ago
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tm04n10mi.glb Publish 0.1.0 · Ray 23d ago
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TM04N10MI

Tritech MOS · MOSFETs · SOT-23-3L

TM04N10MI from Tritech MOS, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) 1.0 to 3.0 V at ID=250 µA.
2 S passive Source; continuous body-diode current up to 4.0 A and drain current 4 A at TA=25℃.
3 D passive Drain; drain-source voltage rating is 100 V, with 4 A continuous and 21 A pulsed drain current.

Key specifications

Parameter Value
Manufacturer Tritech MOS
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source Voltage VDS 100 V 1
Gate-source Voltage VGS -20 20 V 1
Drain Current ID 4 A TA=25℃ 1
Drain Current ID 3.1 A TA=70℃ 1
Pulsed Drain Current IDM 21 A 1
Total Power Dissipation PD 1.2 W @ TA=25℃ 1
Thermal Resistance Junction-to-Ambient RθJA 104 ℃/ W Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch 1
Junction and Storage Temperature Range TJ ,TSTG -55 150 ℃ 1
Drain-Source Breakdown Voltage BVDSS 100 V VGS= 0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=100V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS= ±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) 1 1.8 3 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 110 140 mΩ VGS= 10V, ID=3.0A 2
Static Drain-Source On-Resistance RDS(ON) 160 200 mΩ VGS= 4.5V, ID=2.0A 2
Diode Forward Voltage VSD 0.8 1.2 V IS=3.0A,VGS=0V 2
Maximum Body-Diode Continuous Current IS 4 A 2

CAD (KiCad official)

  • Symbol: TM04N10MI
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: tm04n10mi-etched.step / tm04n10mi-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tm04n10mi.step / tm04n10mi.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tritech MOS datasheet (5 pp, sha256 93b9a969c9da79b4, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF