component
TM03N10AI
Public Made by Adomby adom
Tritech MOS MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTM03N10AI
Tritech MOS · MOSFETs · SOT-23
TM03N10AI from Tritech MOS, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage is limited to ±20 V, with a threshold of 1.1 V min, 1.5 V typ and 2.5 V max at ID = 250 µA. |
| 2 | S | passive | Source; continuous source current is 2 A max, and body diode forward voltage is 1.2 V max at IS = 1 A. |
| 3 | D | passive | Drain; drain-source voltage is 100 V max, with 3 A continuous drain current at 25 °C and 5 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Tritech MOS |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | V(BR)DSS | 100 | V | VGS = 0 V, ID = 250µA | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS = ±20V, VDS = 0V | 2 | |
| Drain Cut-off Current | IDSS | 1 | µA | VDS = 100V, VGS = 0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.1 | 1.5 | 2.5 | V | VGS = VDS, ID = 250µA | 2 |
| Drain-Source on-state Resistance | RDS(on) | 200 | 280 | mΩ | VGS = 10V, ID = 2A | 2 | |
| Drain-Source on-state Resistance | RDS(on) | 230 | 310 | mΩ | VGS = 4.5V, ID = 1.5A | 2 | |
| Body Diode Voltage | VSD | 1.2 | V | IS= 1A, VGS = 0V | 2 | ||
| Continuous Source Current | IS | 2 | A | 2 | |||
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID@TA=25℃ | 3 | A | VGS @ 10V | 1 | ||
| Continuous Drain Current | ID@TA=70℃ | 1.2 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 5 | A | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 1 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 125 | ℃/W | 1 | |||
| Thermal Resistance Junction-Case | RθJC | 80 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
TM03N10AI - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
tm03n10ai-etched.step/tm03n10ai-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tm03n10ai.step/tm03n10ai.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Tritech MOS datasheet (5 pp, sha256
c2fc74a3c18e23ce, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).