component
TLV62565DBVR
Public Made by Adomby adom
Texas Instruments DC-DC Converters, SOT-23-5. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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tlv62565dbvr: specified limits as data (metadata.characteristics, 36 rows from the datasheet)
2 files changed
+482
README.md+43@@ -23,6 +23,49 @@ TLV62565DBVR from Texas Instruments, in a SOT-23-5. Pinout and pin descriptions | Category | Power Management (PMIC) | | Pins | 5 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Input voltage | VIN | 2.7 | | 5.5 | V | | 5 |+| Quiescent current into VIN pin | IQ | | 50 | | uA | IOUT = 0 mA, Not switching | 5 |+| Under voltage lock out (falling threshold) | VUVLO | 2.2 | 2.3 | | V | VIN falling | 5 |+| Under voltage lock out hysteresis | VUVLO | | 200 | | mV | | 5 |+| Thermal shutdown | TJSD | | 150 | | °C | Junction temperature rising | 5 |+| Thermal shutdown hysteresis | TJSD | | 20 | | °C | Junction temperature falling below TJSD | 5 |+| High-level input voltage (TLV62565 EN) | VIH | | 1.2 | | V | 2.7 V ≤ VIN ≤ 5.5 V | 5 |+| Low-level input voltage (TLV62565 EN) | VIL | | 0.4 | | V | 2.7 V ≤ VIN ≤ 5.5 V | 5 |+| Shutdown current into VIN pin | ISD | | 0.1 | 1 | µA | EN = LOW | 5 |+| EN leakage current | IEN,LKG | | 0.01 | 0.16 | µA | | 5 |+| Feedback regulation voltage | VFB | 0.588 | 0.6 | 0.612 | V | PWM operation, TA = -40°C to 85°C | 5 |+| Feedback regulation voltage at 85°C | VFB | 0.594 | 0.6 | 0.606 | V | PWM operation, TA = 85°C | 5 |+| PFM comparator threshold | | | 0.9 | | % | | 5 |+| Feedback input bias current | IFB | | 10 | 100 | nA | VFB = 0.6 V | 5 |+| High-side FET on resistance | RDS(on) | | 173 | | mΩ | ISW = 500 mA, VIN = 3.6 V | 5 |+| Low-side FET on resistance | RDS(on) | | 105 | | mΩ | ISW = 500 mA, VIN = 3.6 V | 5 |+| Low-side FET valley current limit | ILIM,LS | 1.5 | 1.7 | | A | | 5 |+| High-side FET peak current limit | ILIM,HS | 1.8 | 2 | | A | | 5 |+| Switching frequency | fSW | | 1.5 | | MHz | | 5 |+| Maximum duty cycle | DMAX | | | 95 | % | | 1 |+| Minimum off time | tOFF,MIN | | 40 | | ns | | 5 |+| Input voltage (recommended) | VIN | 2.7 | | 5.5 | V | | 4 |+| Operating ambient temperature | TA | -40 | | 85 | °C | | 4 |+| Voltage on VIN, EN, PG | VIN, EN, PG | -0.3 | | 7 | V | All voltage values with respect to network ground | 4 |+| Voltage on SW | SW | -0.3 | | | V | Maximum printed as VIN+0.3 V | 4 |+| Voltage on FB | FB | -0.3 | | 3.6 | V | | 4 |+| Sink current on PG | IPG | | | 660 | µA | | 4 |+| Operating junction temperature | TJ | -40 | | 150 | °C | | 4 |+| Storage temperature | Tstg | -65 | | 150 | °C | | 4 |+| ESD human-body model | V(ESD) | -2000 | | 2000 | V | HBM per ANSI/ESDA/JEDEC JS-001 | 4 |+| ESD charged-device model | V(ESD) | -500 | | 500 | V | CDM per JEDEC JESD22-C101 | 4 |+| Junction-to-ambient thermal resistance (DBV) | RθJA | | 208.3 | | °C/W | | 4 |+| Junction-to-case (top) thermal resistance (DBV) | RθJC(top) | | 73.7 | | °C/W | | 4 |+| Junction-to-board thermal resistance (DBV) | RθJB | | 36.1 | | °C/W | | 4 |+| Junction-to-top characterization parameter (DBV) | ψJT | | 2.3 | | °C/W | | 4 |+| Junction-to-board characterization parameter (DBV) | ψJB | | 35.3 | | °C/W | | 4 |+ ## CAD (KiCad official) - Symbol: `TLV62565DBVR`
page.json+439@@ -145,6 +145,445 @@ "Package": "SOT-23-5", "Category": "Power Management (PMIC)", "Pins": "5"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "acec9293334c09b5",+ "rows": [+ {+ "name": "Input voltage",+ "symbol": "VIN",+ "kind": "electrical",+ "unit": "V",+ "min": 2.7,+ "typ": null,+ "max": 5.5,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Quiescent current into VIN pin",+ "symbol": "IQ",+ "kind": "electrical",+ "unit": "uA",+ "min": null,+ "typ": 50,+ "max": null,+ "conditions": "IOUT = 0 mA, Not switching",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Under voltage lock out (falling threshold)",+ "symbol": "VUVLO",+ "kind": "electrical",+ "unit": "V",+ "min": 2.2,+ "typ": 2.3,+ "max": null,+ "conditions": "VIN falling",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Under voltage lock out hysteresis",+ "symbol": "VUVLO",+ "kind": "electrical",+ "unit": "mV",+ "min": null,+ "typ": 200,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Thermal shutdown",+ "symbol": "TJSD",+ "kind": "electrical",+ "unit": "°C",+ "min": null,+ "typ": 150,+ "max": null,+ "conditions": "Junction temperature rising",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Thermal shutdown hysteresis",+ "symbol": "TJSD",+ "kind": "electrical",+ "unit": "°C",+ "min": null,+ "typ": 20,+ "max": null,+ "conditions": "Junction temperature falling below TJSD",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "High-level input voltage (TLV62565 EN)",+ "symbol": "VIH",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.2,+ "max": null,+ "conditions": "2.7 V ≤ VIN ≤ 5.5 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Low-level input voltage (TLV62565 EN)",+ "symbol": "VIL",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.4,+ "max": null,+ "conditions": "2.7 V ≤ VIN ≤ 5.5 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Shutdown current into VIN pin",+ "symbol": "ISD",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.1,+ "max": 1,+ "conditions": "EN = LOW",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "EN leakage current",+ "symbol": "IEN,LKG",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": 0.01,+ "max": 0.16,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Feedback regulation voltage",+ "symbol": "VFB",+ "kind": "electrical",+ "unit": "V",+ "min": 0.588,+ "typ": 0.6,+ "max": 0.612,+ "conditions": "PWM operation, TA = -40°C to 85°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Feedback regulation voltage at 85°C",+ "symbol": "VFB",+ "kind": "electrical",+ "unit": "V",+ "min": 0.594,+ "typ": 0.6,+ "max": 0.606,+ "conditions": "PWM operation, TA = 85°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "PFM comparator threshold",+ "symbol": "",+ "kind": "electrical",+ "unit": "%",+ "min": null,+ "typ": 0.9,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Feedback input bias current",+ "symbol": "IFB",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": 10,+ "max": 100,+ "conditions": "VFB = 0.6 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "High-side FET on resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 173,+ "max": null,+ "conditions": "ISW = 500 mA, VIN = 3.6 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Low-side FET on resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 105,+ "max": null,+ "conditions": "ISW = 500 mA, VIN = 3.6 V",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Low-side FET valley current limit",+ "symbol": "ILIM,LS",+ "kind": "electrical",+ "unit": "A",+ "min": 1.5,+ "typ": 1.7,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "High-side FET peak current limit",+ "symbol": "ILIM,HS",+ "kind": "electrical",+ "unit": "A",+ "min": 1.8,+ "typ": 2,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Switching frequency",+ "symbol": "fSW",+ "kind": "electrical",+ "unit": "MHz",+ "min": null,+ "typ": 1.5,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Maximum duty cycle",+ "symbol": "DMAX",+ "kind": "electrical",+ "unit": "%",+ "min": null,+ "typ": null,+ "max": 95,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Minimum off time",+ "symbol": "tOFF,MIN",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 40,+ "max": null,+ "conditions": "",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Input voltage (recommended)",+ "symbol": "VIN",+ "kind": "recommended_operating",+ "unit": "V",+ "min": 2.7,+ "typ": null,+ "max": 5.5,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Operating ambient temperature",+ "symbol": "TA",+ "kind": "recommended_operating",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 85,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Voltage on VIN, EN, PG",+ "symbol": "VIN, EN, PG",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": 7,+ "conditions": "All voltage values with respect to network ground",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Voltage on SW",+ "symbol": "SW",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": null,+ "conditions": "Maximum printed as VIN+0.3 V",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Voltage on FB",+ "symbol": "FB",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -0.3,+ "typ": null,+ "max": 3.6,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Sink current on PG",+ "symbol": "IPG",+ "kind": "absolute_maximum",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 660,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -65,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "ESD human-body model",+ "symbol": "V(ESD)",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -2000,+ "typ": null,+ "max": 2000,+ "conditions": "HBM per ANSI/ESDA/JEDEC JS-001",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "ESD charged-device model",+ "symbol": "V(ESD)",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -500,+ "typ": null,+ "max": 500,+ "conditions": "CDM per JEDEC JESD22-C101",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-ambient thermal resistance (DBV)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 208.3,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-case (top) thermal resistance (DBV)",+ "symbol": "RθJC(top)",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 73.7,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-board thermal resistance (DBV)",+ "symbol": "RθJB",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 36.1,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-top characterization parameter (DBV)",+ "symbol": "ψJT",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 2.3,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-board characterization parameter (DBV)",+ "symbol": "ψJB",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 35.3,+ "max": null,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ }+ ] } }, "variants": [],