main
History Download
Ray Publish 0.1.0 cfb9e91 11d ago

TLV4110IDR

Texas Instruments · Pre-ordered Chips · SOIC-8

TLV4110IDR from Texas Instruments, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 NC unconnected No internal connection.
2 IN− input Inverting input of the operational amplifier; common-mode input range is 0 V to VDD−1.5 V.
3 IN+ input Non-inverting input of the operational amplifier; common-mode input range is 0 V to VDD−1.5 V.
4 GND power_in Ground (negative supply); all voltages except differential voltages are referenced to it.
5 NC unconnected No internal connection.
6 OUT output Rail-to-rail amplifier output able to deliver more than 300 mA at 5 V, with absolute maximum output current of 800 mA.
7 VDD power_in Positive supply, recommended 2.5 V to 6 V and 7 V absolute maximum.
8 SHDN input Shutdown control input referenced to GND, with turn-on level 2.1 V at VDD = 3 V and 3.8 V at VDD = 5 V, and turn-off level 0.9 V at 3 V and 1.65 V at 5 V.

Key specifications

Parameter Value
Manufacturer Texas Instruments
Package SOIC-8
Category Interface ICs
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply voltage VDD 2.5 6 V 3
Common-mode input voltage range VICR 0 V max = VDD-1.5 3
Operating free-air temperature, I-suffix TA -40 125 °C I-suffix 3
Supply voltage absolute maximum VDD 7 V wrt GND 3
Output current IO 800 mA see Note 2 3
Continuous RMS output current IO 350 mA TJ ≤ 105°C 3
Continuous RMS output current IO 110 mA TJ ≤ 150°C 3
Peak output current IO 500 mA TJ ≤ 105°C 3
Peak output current IO 155 mA TJ ≤ 150°C 3
Maximum junction temperature TJ 150 °C 3
Storage temperature Tstg -65 150 °C 3
Lead temperature 260 °C 1,6 mm from case for 10 seconds 3
Junction-to-ambient thermal resistance D (8) θJA 176 °C/W D (8) package 3
Junction-to-case thermal resistance D (8) θJC 38.3 °C/W D (8) package 3
Input offset voltage VIO 175 3500 µV VIC = VDD/2, VO = VDD/2, RL = 100 Ω, RS = 50 Ω, 25°C 4
Input offset voltage VIO 4000 µV Full range 4
Offset voltage drift αVIO 3 µV/°C RL = 100 Ω, RS = 50 Ω, 25°C 4
Common-mode rejection ratio CMRR 63 dB VDD = 3 V, VIC = 0 to 2 V, RS = 50 Ω, 25°C 4
Common-mode rejection ratio CMRR 68 dB VDD = 5 V, VIC = 0 to 4 V, RS = 50 Ω, 25°C 4
Large-signal differential voltage amplification AVD 78 84 dB VDD = 3 V, RL = 100 Ω, VO(PP) = 0 to 1 V, 25°C 4
Large-signal differential voltage amplification AVD 67 dB VDD = 3 V, RL = 100 Ω, Full range 4
Large-signal differential voltage amplification AVD 85 100 dB VDD = 3 V, RL = 10 kΩ, VO(PP) = 0 to 1 V, 25°C 4
Large-signal differential voltage amplification AVD 75 dB VDD = 3 V, RL = 10 kΩ, Full range 4
Large-signal differential voltage amplification AVD 88 94 dB VDD = 5 V, RL = 100 Ω, VO(PP) = 0 to 3 V, 25°C 4
Large-signal differential voltage amplification AVD 90 110 dB VDD = 5 V, RL = 10 kΩ, VO(PP) = 0 to 3 V, 25°C 4
Large-signal differential voltage amplification AVD 85 dB VDD = 5 V, RL = 10 kΩ, Full range 4
Input offset current IIO 0.3 pA VIC = VDD/2, 25°C 4
Input offset current IIO 250 pA VIC = VDD/2, TLV411xI, Full range 4
Input bias current IIB 0.3 pA VO = VDD/2, RS = 50 Ω, 25°C 4
Input bias current IIB 500 pA VO = VDD/2, RS = 50 Ω, TLV411xI, Full range 4
Differential input resistance ri(d) 1000 GΩ 25°C 4
Common-mode input capacitance CIC 5 pF f = 100 Hz, 25°C 4
High-level output voltage VOH 2.7 2.97 V VDD = 3 V, IOH = -10 mA, VIC = VDD/2, 25°C 5
High-level output voltage VOH 2.6 2.73 V VDD = 3 V, IOH = -100 mA, VIC = VDD/2, 25°C 5
High-level output voltage VOH 4.7 4.96 V VDD = 5 V, IOH = -10 mA, VIC = VDD/2, 25°C 5
High-level output voltage VOH 4.6 4.76 V VDD = 5 V, IOH = -100 mA, VIC = VDD/2, 25°C 5
High-level output voltage VOH 4.45 4.6 V VDD = 5 V, IOH = -200 mA, VIC = VDD/2, 25°C 5
High-level output voltage VOH 4.35 V VDD = 5 V, IOH = -200 mA, -40°C to 85°C 5
Low-level output voltage VOL 0.03 0.1 V VDD = 3 V and 5 V, IOL = 10 mA, VIC = VDD/2, 25°C 5
Low-level output voltage VOL 0.33 0.4 V VDD = 3 V and 5 V, IOL = 100 mA, VIC = VDD/2, 25°C 5
Low-level output voltage VOL 0.55 V VDD = 3 V and 5 V, IOL = 100 mA, Full range 5
Low-level output voltage VOL 0.38 0.6 V VDD = 5 V, IOL = 200 mA, VIC = VDD/2, 25°C 5
Low-level output voltage VOL 0.7 V VDD = 5 V, IOL = 200 mA, -40°C to 85°C 5
Output current IO 220 mA Measured at 0.5 V from rail, VDD = 3 V, 25°C (printed ±220) 5
Output current IO 320 mA Measured at 0.5 V from rail, VDD = 5 V, 25°C (printed ±320) 5
Short-circuit output current, sourcing IOS 800 mA 25°C 5
Short-circuit output current, sinking IOS 800 mA 25°C 5
Supply current (per channel) IDD 700 1000 µA VO = VDD/2, 25°C 5
Supply current (per channel) IDD 1500 µA VO = VDD/2, Full range 5
Power supply rejection ratio PSRR 70 82 dB VDD = 2.7 to 3.3 V, VIC = VDD/2, No load, 25°C 5
Power supply rejection ratio PSRR 65 dB VDD = 2.7 to 3.3 V, VIC = VDD/2, No load, Full range 5
Power supply rejection ratio PSRR 70 79 dB VDD = 4.5 to 5.5 V, VIC = VDD/2, No load, 25°C 5
Gain bandwidth product GBWP 2.7 MHz RL = 100 Ω, CL = 10 pF, 25°C 6
Slew rate at unity gain SR 0.8 1.57 V/µs VO(pp) = 2 V, RL = 100 Ω, CL = 10 pF, VDD = 3 V, 25°C 6
Slew rate at unity gain SR 0.55 V/µs VDD = 3 V, Full range 6
Slew rate at unity gain SR 1 1.57 V/µs VDD = 5 V, 25°C 6
Slew rate at unity gain SR 0.7 V/µs VDD = 5 V, Full range 6
Phase margin φM 66 ° RL = 100 Ω, CL = 10 pF, 25°C 6
Gain margin 16 dB RL = 100 Ω, CL = 10 pF, 25°C 6
Settling time ts 0.7 µs V(STEP)pp = 1 V, AV = -1, CL = 10 pF, RL = 100 Ω, 0.1%, 25°C 6
Settling time ts 1.3 µs 0.01%, 25°C 6
Total harmonic distortion plus noise THD+N 0.025 % VO(pp) = VDD/2 V, RL = 100 Ω, f = 100 Hz, AV = 1 6
Equivalent input noise voltage Vn 55 nV/√Hz f = 100 Hz, 25°C 6
Equivalent input noise voltage Vn 10 nV/√Hz f = 10 kHz, 25°C 6
Equivalent input noise current In 0.31 fA/√Hz f = 1 kHz 6
Supply current in shutdown mode (per channel) IDD(SHDN) 3.4 10 µA SHDN = 0 V, 25°C 6
Supply current in shutdown mode (per channel) IDD(SHDN) 15 µA SHDN = 0 V, Full range 6

CAD (KiCad official)

  • Symbol: TLV4110IDR
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: tlv4110idr-etched.step / tlv4110idr-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tlv4110idr.step / tlv4110idr.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Texas Instruments datasheet (44 pp, sha256 fbdc43bbddb636fb, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF