component

TLP627MF

Public Made by Adom

by adom

TOSHIBA Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TLP627MF

TOSHIBA · Transistor, Photovoltaic Output Optoisolators · DIP-4

TLP627MF from TOSHIBA, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode input Anode of the infrared emitting diode, the photocoupler's LED input.
2 Cathode passive Cathode of the infrared emitting diode, the photocoupler's LED input.
3 Emitter passive Emitter of the photo darlington transistor output; pins 3 and 4 are shorted together in the two-terminal isolation tests.
4 Collector output Collector of the photo darlington transistor output, rated for collector-emitter voltage of 300 V (min).

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package DIP-4
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Input forward current IF 50 mA 3
Input forward current derating ∆IF/∆Ta -1.42 mA/°C Ta ≥ 90 °C 3
Input forward current (pulsed) IFP 1 A PW ≤ 0.1 ms, f = 100 Hz 3
Input reverse voltage VR 5 V 3
Input power dissipation PD 100 mW 3
Input power dissipation derating ∆PD/∆Ta -2.85 mW/°C Ta ≥ 25 °C 3
Junction temperature (LED) Tj 125 °C 3
Collector-emitter voltage VCEO 300 V 3
Emitter-collector voltage VECO 0.3 V 3
Collector current ICPC 150 mA 3
Collector power dissipation PC 150 mW 3
Collector power dissipation derating ∆PC/∆Ta -1.5 mW/°C Ta ≥ 25 °C 3
Junction temperature (detector) Tj 125 °C 3
Operating temperature Topr -55 110 °C 3
Storage temperature Tstg -55 125 °C 3
Lead soldering temperature Tsol 260 °C 10 s 3
Total power dissipation PT 250 mW 3
Total power dissipation derating ∆PT/∆Ta -2.5 mW/°C Ta ≥ 25 °C 3
Isolation voltage BVS 5000 Vrms AC, 60 s, R.H. ≤ 60 % 3
Input forward voltage VF 1.1 1.25 1.4 V IF = 10 mA 3
Input reverse current IR 10 µA VR = 5 V 3
Collector-emitter breakdown voltage V(BR)CEO 300 V IC = 0.1 mA 3
Emitter-collector breakdown voltage V(BR)ECO 0.3 V IE = 0.1 mA 3
Dark current IDARK 0.002 0.2 µA VCE = 200 V 3
Dark current at high temperature IDARK 20 µA VCE = 200 V, Ta = 85 °C 3
Current transfer ratio IC/IF 1000 6000 % IF = 1 mA, VCE = 1 V 3
Saturated current transfer ratio IC/IF(sat) 500 % IF = 10 mA, VCE = 1 V 3
Collector-emitter saturation voltage VCE(sat) 1 V IC = 10 mA, IF = 1 mA 3
Collector-emitter saturation voltage VCE(sat) 1.2 V IC = 100 mA, IF = 10 mA 3
OFF-state collector current IC(off) 20 µA VF = 0.7 V, VCE = 200 V 3
Isolation resistance (printed as 1 x 10^12) RS 1 ×10^12 Ω VS = 500 V, R.H. ≤ 60 % 4
Isolation voltage BVS 5000 Vrms AC, 60 s 4

CAD (KiCad official)

  • Symbol: TLP627MF
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: tlp627mf-etched.step / tlp627mf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tlp627mf.step / tlp627mf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (18 pp, sha256 0ff9619c9fa07f61, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF