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TLP621GB-1

Public Made by Adom

by adom

UMW Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TLP621GB-1

UMW · Transistor, Photovoltaic Output Optoisolators · DIP-4

TLP621GB-1 from UMW, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Anode passive LED anode of the gallium arsenide infrared emitting diode; the LED reverse current is specified at VR=5V and forward voltage at IF=10mA (typ 1.15V).
2 Cathode passive LED cathode of the infrared emitting diode, returned to the input drive circuit; LED forward current is rated at 50mA maximum in the absolute maximum ratings.
3 Emitter passive Phototransistor emitter on the detector side; the emitter-collector breakdown voltage is 7V minimum at IE=0.1mA.
4 Collector passive Phototransistor collector on the detector side; the collector-emitter breakdown voltage is 55V minimum at IC=0.5mA and collector current is limited to 50mA.

Key specifications

Parameter Value
Manufacturer UMW
Package DIP-4
Category Optoisolators
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage VCC 5 24 V 3
Forward Current IF 16 20 mA 3
Collector Current IC 1 10 mA 3
Operating Temperature TOPR -25 85 °C 3
Pulse Forward Current IFP 1 A 100μs pulse, 100pps 2
Reverse Voltage VR 5 V 2
Junction Temperature (LED) TJ 125 °C 2
Collector-Emitter Voltage VCEO 55 V 2
Emitter-Collector Voltage VECO 7 V 2
Collector Current IC 50 mA 2
Junction Temperature (detector) TJ 125 °C 2
Storage Temperature Range TSTG -55 125 °C 2
Operating Temperature Range TOPR -55 100 °C 2
Lead Soldering Temperature TSOL 260 °C 10s 2
Forward Voltage VF 1 1.15 1.3 V IF=10mA 4
Reverse Current IR 10 µA VR=5V 4
Collector-Emitter Breakdown Voltage V(BR)CEO 55 V IC=0.5mA 4
Emitter-Collector Breakdown Voltage V(BR)ECO 7 V IE=0.1mA 4
Collector Dark Current ICEO 100 nA VCE=24V 4
Collector Dark Current ICEO 50 µA VCE=24V, Ta=85°C 4
Current Transfer Ratio IC/IF 50 600 % IF=5mA, VCE=5V, Ta=25°C 3
Current Transfer Ratio (Rank GB) IC/IF 100 600 % IF=5mA, VCE=5V, Rank GB 4
Saturated CTR IC/IF(SAT) 30 % IF=1mA, VCE=0.4V 4
Saturated CTR (Rank GB) IC/IF(SAT) 60 % IF=1mA, VCE=0.4V, Rank GB 4
Collector-Emitter Saturation Voltage VCE (sat) 0.4 V IC=2.4mA, IF=8mA 4
Capacitor (Input To Output) CS 0.8 pF VS=0, f=1MHz 5
Isolation Voltage BVS 5000 Vrms AC, 1 minute 5
Isolation Voltage BVS 10000 Vrms AC, 1 second, in oil 5
Isolation Voltage BVS 10000 Vdc DC, 1 minute, in oil 5

CAD (KiCad official)

  • Symbol: TLP621GB-1
  • Footprint: Package_DIP:DIP-4_W7.62mm
  • 3D model: DIP-4 (KiCad packages3D, STEP)
  • 3D model files: tlp621gb-1-etched.step / tlp621gb-1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tlp621gb-1.step / tlp621gb-1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UMW datasheet (12 pp, sha256 494b869890af9070, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF