component
TLP620
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TOSHIBA Transistor, Photovoltaic Output Optoisolators, DIP-4. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TLP620
TOSHIBA · Transistor, Photovoltaic Output Optoisolators · DIP-4
TLP620 from TOSHIBA, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | input | Input LED terminal, anode of the two inverse-parallel GaAs infrared emitting diodes; the LED forward current IF(RMS) is rated 60 mA maximum for TLP620. |
| 2 | CATHODE | input | Input LED terminal, cathode of the inverse-parallel LED pair; the datasheet tests the LED with IF = ±10 mA and specifies a 60 mA maximum IF(RMS) for TLP620. |
| 3 | EMITTER | passive | Phototransistor emitter; the detector collector-emitter voltage VCEO is rated 55 V minimum and emitter-collector voltage VECO is 7 V. |
| 4 | COLLECTOR | passive | Phototransistor collector; collector current IC is rated 50 mA maximum in the absolute maximum ratings. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | DIP-4 |
| Category | Optoisolators |
| Pins | 4 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| LED forward voltage | VF | 1 | 1.15 | 1.3 | V | IF = ±10mA | 4 |
| LED forward current (reverse leakage) | IF | 2.5 | 20 | μA | VF = ±0.7V | 4 | |
| Collector-emitter breakdown voltage | V(BR)CEO | 55 | V | IC = 0.5mA | 4 | ||
| Emitter-collector breakdown voltage | V(BR)ECO | 7 | V | IE = 0.1mA | 4 | ||
| Collector dark current | ICEO | 10 | 100 | nA | VCE = 24V | 4 | |
| Collector dark current at Ta = 85°C | ICEO | 2 | 50 | μA | VCE = 24V, Ta = 85°C | 4 | |
| Current transfer ratio | IC / IF | 50 | 600 | % | IF = ±5mA, VCE = 5V | 4 | |
| Collector-emitter saturation voltage | VCE (sat) | 0.4 | V | IC = 2.4mA, IF = ±8mA | 4 | ||
| Off-state collector current | IC (off) | 1 | 10 | μA | VF = ±0.7V, VCE = 24V | 4 | |
| CTR symmetry | IC (ratio) | 0.33 | 3 | IC (IF = −5mA) / IC (IF = +5mA) | 4 | ||
| Isolation voltage (AC, 1 minute) | BVS | 5000 | Vrms | AC, 1 minute | 5 | ||
| Supply voltage | VCC | 5 | 24 | V | 4 | ||
| Forward current | IF (RMS) | 16 | 25 | mA | 4 | ||
| Collector current | IC | 1 | 10 | mA | 4 | ||
| Operating temperature | Topr | -25 | 85 | °C | 4 | ||
| LED forward current (RMS) | IF (RMS) | 60 | mA | 3 | |||
| Forward current derating | ΔIF / °C | -0.7 | mA / °C | Ta ≥ 39°C | 3 | ||
| Pulse forward current | IFP | 1 | A | 100μs pulse, 100pps | 3 | ||
| Power dissipation (LED) | PD | 100 | mW | 1 circuit | 3 | ||
| Power dissipation derating (LED) | ΔPD / °C | -1.2 | mW / °C | Ta ≥ 39°C | 3 | ||
| Junction temperature (LED) | Tj | 125 | °C | 3 | |||
| Collector-emitter voltage | VCEO | 55 | V | 3 | |||
| Emitter-collector voltage | VECO | 7 | V | 3 | |||
| Collector current | IC | 50 | mA | 3 | |||
| Collector power dissipation (1 circuit) | PC | 150 | mW | 1 circuit | 3 | ||
| Collector power dissipation derating (1 circuit) | ΔPC / °C | -1.5 | mW / °C | Ta ≥ 25°C, 1 circuit | 3 | ||
| Junction temperature (detector) | Tj | 125 | °C | 3 | |||
| Storage temperature range | Tstg | -55 | 125 | °C | 3 | ||
| Operating temperature range | Topr | -55 | 100 | °C | 3 | ||
| Lead soldering temperature | Tsold | 260 | °C | 10 s | 3 | ||
| Total package power dissipation (1 circuit) | PT | 250 | mW | 1 circuit | 3 | ||
| Total package power dissipation derating | ΔPT / °C | -2.5 | mW / °C | Ta ≥ 25°C, 1 circuit | 3 | ||
| Isolation voltage (absolute maximum table) | BVS | 5000 | Vrms | AC, 1 min., RH ≤ 60% | 3 |
CAD (KiCad official)
- Symbol:
TLP620 - Footprint:
Package_DIP:DIP-4_W7.62mm - 3D model: DIP-4 (KiCad packages3D, STEP)
- 3D model files:
tlp620-etched.step/tlp620-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tlp620.step/tlp620.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (10 pp, sha256
af07a9d862216b83, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TLP620
**TOSHIBA** · Transistor, Photovoltaic Output Optoisolators · DIP-4
TLP620 from TOSHIBA, in a DIP-4. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | input | Input LED terminal, anode of the two inverse-parallel GaAs infrared emitting diodes; the LED forward current IF(RMS) is rated 60 mA maximum for TLP620. |
| 2 | CATHODE | input | Input LED terminal, cathode of the inverse-parallel LED pair; the datasheet tests the LED with IF = ±10 mA and specifies a 60 mA maximum IF(RMS) for TLP620. |
| 3 | EMITTER | passive | Phototransistor emitter; the detector collector-emitter voltage VCEO is rated 55 V minimum and emitter-collector voltage VECO is 7 V. |
| 4 | COLLECTOR | passive | Phototransistor collector; collector current IC is rated 50 mA maximum in the absolute maximum ratings. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | DIP-4 |
| Category | Optoisolators |
| Pins | 4 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| LED forward voltage | VF | 1 | 1.15 | 1.3 | V | IF = ±10mA | 4 |
| LED forward current (reverse leakage) | IF | | 2.5 | 20 | μA | VF = ±0.7V | 4 |
| Collector-emitter breakdown voltage | V(BR)CEO | 55 | | | V | IC = 0.5mA | 4 |
| Emitter-collector breakdown voltage | V(BR)ECO | 7 | | | V | IE = 0.1mA | 4 |
| Collector dark current | ICEO | | 10 | 100 | nA | VCE = 24V | 4 |
| Collector dark current at Ta = 85°C | ICEO | | 2 | 50 | μA | VCE = 24V, Ta = 85°C | 4 |
| Current transfer ratio | IC / IF | 50 | | 600 | % | IF = ±5mA, VCE = 5V | 4 |
| Collector-emitter saturation voltage | VCE (sat) | | | 0.4 | V | IC = 2.4mA, IF = ±8mA | 4 |
| Off-state collector current | IC (off) | | 1 | 10 | μA | VF = ±0.7V, VCE = 24V | 4 |
| CTR symmetry | IC (ratio) | 0.33 | | 3 | | IC (IF = −5mA) / IC (IF = +5mA) | 4 |
| Isolation voltage (AC, 1 minute) | BVS | 5000 | | | Vrms | AC, 1 minute | 5 |
| Supply voltage | VCC | | 5 | 24 | V | | 4 |
| Forward current | IF (RMS) | | 16 | 25 | mA | | 4 |
| Collector current | IC | | 1 | 10 | mA | | 4 |
| Operating temperature | Topr | -25 | | 85 | °C | | 4 |
| LED forward current (RMS) | IF (RMS) | | | 60 | mA | | 3 |
| Forward current derating | ΔIF / °C | | | -0.7 | mA / °C | Ta ≥ 39°C | 3 |
| Pulse forward current | IFP | | | 1 | A | 100μs pulse, 100pps | 3 |
| Power dissipation (LED) | PD | | | 100 | mW | 1 circuit | 3 |
| Power dissipation derating (LED) | ΔPD / °C | | | -1.2 | mW / °C | Ta ≥ 39°C | 3 |
| Junction temperature (LED) | Tj | | | 125 | °C | | 3 |
| Collector-emitter voltage | VCEO | | | 55 | V | | 3 |
| Emitter-collector voltage | VECO | | | 7 | V | | 3 |
| Collector current | IC | | | 50 | mA | | 3 |
| Collector power dissipation (1 circuit) | PC | | | 150 | mW | 1 circuit | 3 |
| Collector power dissipation derating (1 circuit) | ΔPC / °C | | | -1.5 | mW / °C | Ta ≥ 25°C, 1 circuit | 3 |
| Junction temperature (detector) | Tj | | | 125 | °C | | 3 |
| Storage temperature range | Tstg | -55 | | 125 | °C | | 3 |
| Operating temperature range | Topr | -55 | | 100 | °C | | 3 |
| Lead soldering temperature | Tsold | | | 260 | °C | 10 s | 3 |
| Total package power dissipation (1 circuit) | PT | | | 250 | mW | 1 circuit | 3 |
| Total package power dissipation derating | ΔPT / °C | | | -2.5 | mW / °C | Ta ≥ 25°C, 1 circuit | 3 |
| Isolation voltage (absolute maximum table) | BVS | 5000 | | | Vrms | AC, 1 min., RH ≤ 60% | 3 |
## CAD (KiCad official)
- Symbol: `TLP620`
- Footprint: `Package_DIP:DIP-4_W7.62mm`
- 3D model: DIP-4 (KiCad packages3D, STEP)
- 3D model files: `tlp620-etched.step` / `tlp620-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tlp620.step` / `tlp620.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894176725913600) (10 pp, sha256 `af07a9d862216b83`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tlp620-datasheet.pdf)