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TLE8366EV50XUMA1

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Infineon Technologies DC-DC Converters, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TLE8366EV50XUMA1

Infineon Technologies · DC-DC Converters · SOIC-8

TLE8366EV50XUMA1 from Infineon Technologies, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 SYNC input Synchronization input to adjust the switching frequency; the datasheet gives a SYNC high level valid from 2.9 V and a low level valid up to 0.8 V, and it must be connected to GND if not used.
2 GND power_in Ground reference for the device; the exposed pad must also be connected to GND by low inductance wiring.
3 COMP passive Compensation input for regulation loop stability, to be connected to a compensation RC network; leaving it open might lead to unstable operation.
4 FB input Feedback input; for the fixed 5.0 V and 3.3 V versions it connects directly to the output capacitor, while the adjustable TLE8366EV uses a voltage divider with a 0.6 V reference.
5 BDS power_in Buck driver supply input; the bootstrap capacitor is connected between this pin and pin BUO, and the buck switch is shut down if the bootstrap voltage is too low.
6 BUO output Buck switch output, the source of the integrated power DMOS transistor, connected to the catch diode cathode and the buck inductor; the absolute maximum range is -2.0 V to VVS + 0.3 V.
7 EN input Active-high enable input with an integrated pull-down resistor; the datasheet gives a high-level valid threshold of 3.0 V and a low-level valid threshold of 0.8 V, with the device off when left open.
8 VS power_in Supply voltage input with a functional range of 4.75 V to 45 V and an absolute maximum of 45 V.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOIC-8
Category Power Management ICs
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Synchronization Input voltage VSYNC -0.3 5.5 V 5
Synchronization Input voltage VSYNC 6.2 V t < 10s 5
Compensation Input voltage VCOMP -0.3 5.5 V 5
Compensation Input voltage VCOMP 6.2 V t < 10s 5
Feedback Input voltage VFB -0.3 10 V TLE8366EV50; TLE8366EV33 5
Buck Switch Output voltage VBUO -2 V 5
Enable Input voltage VEN -40 45 V 5
Supply Voltage Input voltage VVS -0.3 45 V 5
Junction Temperature Tj -40 150 °C 5
Storage Temperature Tstg -55 150 °C 5
ESD Resistivity HBM VESD -2 2 kV HBM 5
ESD Resistivity to GND CDM VESD -500 500 V CDM 5
ESD Resistivity corner pins to GND CDM VESD -750 750 V CDM 5
Supply Voltage VS 4.75 45 V 6
Buck inductor LBU 18 56 µH 6
Buck capacitor CBU1 33 120 µF 6
Buck capacitor ESR ESRBU1 0.3 Ω 6
Junction Temperature Tj -40 150 °C 6
Junction to Case thermal resistance RthJC 10 12 K/W 6
Junction to ambient thermal resistance RthJA 52 K/W JEDEC JESD52-1,-5,-7; 2s2p FR4 PCB; 1 W 6
Output voltage VFB 4.9 5 5.1 V TLE8366EV50; VVEN = VS; 0.1A < ICC < 1.0A 9
Output voltage VFB 4.8 5 5.2 V TLE8366EV50; VVEN = VS; 1mA < ICC < 1.8A 9
Minimum output load requirement ICC,MIN 0 mA TLE8366EV50 10
FB input current IFB 900 µA TLE8366EV50, TLE8366EV33 10
Power stage on-resistance Ron 500 mΩ tested at 300 mA 10
Buck peak over current limit IBUOC 2.2 3.6 A 10
Charge pump current ICP 2 mA VS = 12V; VBUO = VBDS = GND 10
Charge pump switch-off threshold VBDS - VBUO 5 V (VBDS - VBUO) increasing 10
Maximum duty cycle Dmax 100 % 10
Soft start ramp tstart 350 500 750 µs VFB rising from 5% to 95% of VFB,nom 10
Input under voltage shutdown threshold VS,off 3.75 V VS decreasing 10
Input voltage startup threshold VS,on 4.75 V VS increasing 10
Input under voltage shutdown hysteresis VS,hyst 150 mV 10
Current Consumption, shut down mode Iq,OFF 0.1 2 µA VEN = 0.8V; Tj < 105°C; VS = 16V 12
Current Consumption, active mode Iq,ON 7 mA VEN = 5.0V; ICC = 0mA; VS = 16V; FB connected to VOUT 12
Current Consumption, active mode Iq,ON 10 mA VEN = 5.0V; ICC = 1.8A; VS = 16V; FB connected to VOUT 12
Enable high signal valid VEN,lo 3 V 12
Enable low signal valid VEN,hi 0.8 V 12
Enable hysteresis VEN,HY 50 200 400 mV 12
Enable high input current IEN,hi 30 µA VEN = 16V 12
Enable low input current IEN,lo 0.1 1 µA VEN = 0.5V 12
Over temperature shutdown Tj,sd 160 175 190 °C 12
Oscillator frequency fosc 330 370 420 kHz VSYNC = 0V 13
Synchronization capture range fsync 200 530 kHz 13
SYNC signal high level valid VSYNC,hi 2.9 V 13
SYNC signal low level valid VSYNC,lo 0.8 V 13
SYNC input internal pull-down RSYNC 0.6 1 1.4 MΩ VSYNC = 5V 13

CAD (KiCad official)

  • Symbol: TLE8366EV50XUMA1
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: tle8366ev50xuma1-etched.step / tle8366ev50xuma1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tle8366ev50xuma1.step / tle8366ev50xuma1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (19 pp, sha256 f841ed5c84d84ae3, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF