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TLE7269G

Infineon Technologies · LIN Transceivers · SOIC-14

TLE7269G from Infineon Technologies, in a SOIC-14. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 RxD1 output Receive data output 1 is LOW in the dominant state and goes active LOW after a Wake-Up event at BUS1 or WK pin.
2 EN input Enable input with integrated pull-down; the device is set to normal operation mode when HIGH.
3 WK input Wake input is active LOW, negative edge triggered, with an internal pull-up.
4 TxD1 input Transmit data input 1 has an integrated pull-down, is LOW in the dominant state, and goes active LOW after Wake-Up via the WK pin.
5 TxD2 input Transmit data input 2 has an integrated pull-down and is LOW in the dominant state.
6 VIO power_in Logic voltage supply input for the RxD and TxD pins, supplied at 3.3 V or 5 V.
7 RxD2 output Receive data output 2 is LOW in the dominant state and goes active LOW after a Wake-Up event at BUS2.
8 INH2 output Inhibit output 2 is battery-supply related and HIGH (VS) in Normal and Stand-By operation mode, used to control an external voltage regulator or a master bus termination resistor.
9 W2O input Wake BUS 2 OFF switches off the Wake-Up feature on BUS 2 when active HIGH, and has an integrated pull-down.
10 BUS2 bidirectional Bus 2 LIN bus line input/output with internal termination and pull-up current source, LOW in the dominant state.
11 GND power_in Ground connection.
12 BUS1 bidirectional Bus 1 LIN bus line input/output with internal termination and pull-up current source, LOW in the dominant state.
13 VS power_in Battery supply input for the device.
14 INH1 output Inhibit output 1 is battery-supply related and HIGH (VS) in Normal and Stand-By operation mode, used to control an external voltage regulator or a master bus termination resistor.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package SOIC-14
Category Interface ICs
Pins 14

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Battery supply voltage VS -0.3 40 V LIN Spec 2.1 Param. 10 19
Logic supply voltage VIO -0.3 5.5 V 19
Bus and WK input voltage versus GND VBUS,G -40 40 V 19
Bus and WK input voltage versus VS VBUS,Vs -40 40 V 19
Logic voltages at EN, W2O, TxD1, TxD2, RxD1, RxD2 Vlogic -0.3 5.5 V 19
INH1, INH2 voltage versus GND VINH,G -0.3 40 V 19
INH1, INH2 voltage versus VS VINH,Vs -40 0.3 V 19
Output current at INH1, INH2 IINH -150 80 mA Output current internally limited to -150 mA (footnote 2) 19
Junction temperature Tj -40 150 °C 19
Storage temperature Ts -55 150 °C 19
Electrostatic discharge voltage at VS, BUS1, BUS2, WK versus GND VESD -6 6 kV Human Body Model (100pF via 1.5 kΩ) 19
Electrostatic discharge voltage W2O versus VS VESD -1 1 kV Human Body Model (100pF via 1.5 kΩ) 19
Electrostatic discharge voltage all pins except W2O versus VS VESD -2 2 kV Human Body Model (100pF via 1.5 kΩ) 19
Supply Voltage Range for Normal Operation VS(nor) 7 27 V LIN Spec 2.1 Param. 10 20
Extended Supply Voltage range for operation VS(ext) 5 40 V Parameter deviations possible 20
Supply voltage VIO VIO 3 5.5 V 20
Junction temperature (operating range) Tj -40 150 °C Not subject to production test, specified by design (footnote 1) 20
Junction to Soldering Point RthJSP 25 K/W measured to pin 11 20
Junction to Ambient RthJA 130 K/W JESD 51-2, 51-3, FRA4 76,2 mm x 114,3 mm x 1,5 mm, 70 μm Cu, minimal footprint, Ta = 27°C 20
Thermal shutdown junction temperature TjSD 150 170 190 °C 20
Current consumption at VS (both channels recessive) IS,rec 0.5 1.6 3 mA recessive state, without RL; VS = 13.5 V; VTxD = Vio 21
Current consumption normal mode at Vio IVIO,norm 10 50 µA Normal Operation mode. VIO=5 V 21
Current consumption at VS (both channels dominant) IS,dom 3 5 mA dominant state, without RL; VS = 13.5 V; VTxD = 0 V 21
Current consumption in sleep mode at Vio IVIO,Sleep 1 10 µA Sleep mode, VIO=5 V 21
Current consumption in sleep mode IS,Sleep 7 12 µA Sleep mode, VS = 18 V; VBUS= VWK = VS; 21
Current consumption in sleep mode (Tj < 85 °C) IS,Sleep,typ 5 10 µA Sleep mode, Tj < 85 °C; VS = 13.5 V; VWK= VS= VBUS; 21
Blocking under voltage detection at VS (VS on the falling edge) Vs,UV,BLK 3.5 5 V Communication blocked, no reset (see Figure 11) 21
Power ON under voltage detection at VS Vs,UV,PON 3.5 V Device reset to Stand-By Mode (see Figure 11) 21
Under voltage detection at VIO VIO,UV 1.5 2.5 3 V Communication blocked, no reset (see Figure 11) 21
HIGH level output current (RxD) IRD,H -10 -4 -2 mA VRD = 0.8 × VIO 21
LOW level output current (RxD) IRD,L 2 4 10 mA VRD = 0.2 × VIO 21
LOW level input voltage range (TxD) VTD,L 0 V Dominant state 22
Pull-down resistance (TxD) RTD 100 350 800 kΩ VTxD = Vio 22
Low level leakage current (TxD) ITD 0 10 µA VEN = 0 V; VTxD = 0 V 22
Dominant current standby mode after Wake-Up ITD,L 1.5 3 10 mA VTxD = 0.9 V; WK = 0 V; VS = 13.5 V. Only valid for TxD 1 22
LOW level input voltage range (W2O) VW2O,L 0 V 22
Pull-down resistance (W2O) RW2O 15 35 60 kΩ 22
HIGH level input voltage range (EN) VEN,on 2 V Normal Operation Mode 22
LOW level input voltage range (EN) VEN,off 0 0.8 V Sleep Mode or Stand-By Mode 22
Pull-down resistance (EN) REN 15 30 60 kΩ 22
Inhibit Ron resistance RINH,on 22 36 50 Ω IINH = -15 mA 22
Maximum INH output current IINH -150 -40 mA VINH = 0 V 22
Leakage current INH IINH,lk -5 5 µA Sleep Mode; VINH = 0 V 22
LOW level input voltage (WK) VWK,L -0.3 V VS = 13.5 V; 23
Pull-up current (WK) IWK,PU -60 -30 -3 µA VWK = 0V 23
High level leakage current (WK) IWK,H,leak -5 5 µA VS = 0 V; VWK = 40 V 23
Dominant time for wake-up tWK 30 150 µs 23
Dominant time for bus wake-up tWK,bus 30 150 µs 23
Bus dominant output voltage maximum load (6.0 V ≤ VS ≤ 7.3 V) VBUS,do 1.2 V VTxD = 0 V; RL = 500 Ω; 6,0 ≤ VS ≤ 7,3 V 23
Bus dominant output voltage maximum load (10 < VS ≤ 18 V) VBUS,do 2 V VTxD = 0 V; RL = 500 Ω; 10 < VS ≤ 18 V 23
Bus short circuit current IBUS_LIM 40 100 150 mA VBUS = 13.5 V; LIN Spec 2.1 (Par. 12) 23
Leakage current (no GND) IBUS_NO_GND -1000 -450 µA VS = 0 V; VBUS = -12 V; LIN Spec 2.1 (Par. 15) 23
Leakage current (dominant, passive) IBUS_PAS_dom -1 mA VS = 18 V; VBUS = 0 V; LIN Spec 2.1 (Par. 13) 24
Leakage current (recessive, passive) IBUS_PAS_rec 20 µA VS = 8 V; VBUS = 18 V; LIN Spec 2.1 (Par. 14) 24
Bus pull-up resistance Rslave 20 30 47 kΩ Normal mode LIN Spec 2.1 (Par. 26) 24
LIN output current IBUS -60 -30 -5 µA Sleep mode VS = 13.5 V; VEN = 0 V 24
Propagation delay LIN bus to RxD, dominant to RxD low trx_pdf 1 6 µs LIN Spec 2.1 (Par. 31); Vio = 5 V; CRxD = 20 pF 24
Propagation delay LIN bus to RxD, recessive to RxD high trx_pdr 1 6 µs LIN Spec 2.1 (Par. 31); Vio = 5 V; CRxD = 20 pF 24
Receiver delay symmetry trx_sym -2 2 µs trx_sym = trx_pdf- trx_pdr; LIN Spec 2.1 (Par. 32); Vio = 5 V; CRxD = 20 pF 24
Delay time for mode change tMODE 120 µs See Figure 5, Figure 6 24

CAD (KiCad official)

  • Symbol: TLE7269G
  • Footprint: Package_SO:SOIC-14_3.9x8.7mm_P1.27mm
  • 3D model: SOIC-14 (KiCad packages3D, STEP)
  • 3D model files: tle7269g-etched.step / tle7269g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tle7269g.step / tle7269g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (34 pp, sha256 6a2e1bf338eb4601, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF