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TLE4276GV

Infineon Technologies · Linear Voltage Regulators (LDO) · TO-263-5

TLE4276GV from Infineon Technologies, in a TO-263-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 I power_in Input supply, operating up to 40 V (abs max -42 to 45 V); block to ground directly at the IC with a ceramic capacitor.
2 INH input Active-low inhibit input; pulling it low switches the regulator off and drops current consumption below 10 µA.
3 GND power_in Ground.
4 VA input Voltage adjust input for the adjustable version (TLE4276GV); connect an external divider to set the output voltage between 2.5 V and 20 V (internal reference typ. 2.5 V).
5 Q power_out Regulated output, up to 400 mA; block to GND with a capacitor of at least 22 µF and ESR ≤ 3 Ω at 10 kHz.
6 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-263-5
Category Power Management ICs
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Output voltage tolerance ΔVQ -4 4 % V-Version, R2 < 50 kΩ, VQ + 1 V ≤ VI ≤ 40 V, VI > 4.5 V, 5 mA ≤ IQ ≤ 400 mA 8
Output current limitation IQ 400 600 1100 mA Measured when VQ has dropped 100 mV from nominal at VI = 13.5 V 8
Current consumption (inhibited) Iq 10 µA VINH = 0 V; Tj ≤ 100 °C 8
Current consumption Iq 100 220 µA IQ = 1 mA 8
Current consumption Iq 5 10 mA IQ = 250 mA 8
Current consumption Iq 15 25 mA IQ = 400 mA 8
Drop voltage VDR 250 500 mV variable devices, IQ = 250 mA, VI > 4.5 V, VDR = VI - VQ 8
Load regulation ΔVQ,Lo 5 35 mV IQ = 5 mA to 400 mA 8
Line regulation ΔVQ,Li 15 25 mV ΔVI = 12 V to 32 V, IQ = 5 mA 8
Inhibit on voltage VINH 2 3.5 V VQ ≥ 4.9 V 9
Inhibit off voltage VINH 0.5 1.7 V VQ ≤ 0.1 V 9
Inhibit input current IINH 5 10 20 µA VINH = 5 V 9
Input voltage (VQ < 4 V) VI 4.5 40 V Variable device V, VQ < 4 V 7
Junction temperature (operating) Tj -40 150 °C 7
Input voltage (absolute) VI -42 45 V 6
Inhibit voltage (absolute) VINH -42 45 V 6
Voltage adjust input voltage VVA -0.3 10 V 6
Output voltage (absolute) VQ -1 40 V 6
Ground current IGND 100 mA 6
Junction temperature (absolute) Tj -40 150 °C 6
Storage temperature Tstg -50 150 °C 6
ESD capability HBM VESD,HBM 2000 V Human Body Model 6
Thermal resistance junction-ambient Rthj-a 80 K/W TO263, PCB 80 × 80 × 1.5 mm, footprint only, zero airflow 7
Thermal resistance junction-case Rthj-c 4 K/W 7
Power supply ripple rejection PSRR 54 dB fr = 100 Hz; Vr = 0.5 Vpp 8
Temperature output voltage drift ΔVQ/dT 0.5 mV/K 8

CAD (KiCad official)

  • Symbol: TLE4276GV
  • Footprint: Package_TO_SOT_SMD:TO-263-5_TabPin6
  • 3D model: TO-263-5 (KiCad packages3D, STEP)
  • 3D model files: tle4276gv-etched.step / tle4276gv-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tle4276gv.step / tle4276gv.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (16 pp, sha256 7eeb7d3744f71800, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF