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TL4050A25IDCKR
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Texas Instruments Voltage Reference, SC-70-5. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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tl4050a25idckr: specified limits as data (metadata.characteristics, 24 rows from the datasheet)
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TL4050A25IDCKR
Texas Instruments · Voltage Reference · SC-70-5
TL4050A25IDCKR from Texas Instruments, in a SC-70-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Anode (shunt reference return) terminal of the two-terminal TL4050 reference. |
| 2 | * | passive | Starred pin that TI recommends connecting to the anode in applications with high EMI (for example near transformers or other EMI sources) or significant high-frequency switching noise. |
| 3 | CATHODE | passive | Cathode terminal that carries the reference voltage VZ (2.5 V for this device), with operating cathode current up to 15 mA and a minimum of 41 µA typical. |
| 4 | NC | unconnected | No internal connection. |
| 5 | NC | unconnected | No internal connection. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SC-70-5 |
| Category | Power Management (PMIC) |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse breakdown voltage tolerance | ΔVZ | -2.5 | 2.5 | mV | IZ = 100μA, 25°C | 5 | |
| Reverse breakdown voltage tolerance | ΔVZ | -11 | 11 | mV | IZ = 100μA, full range TA = –40°C to 85°C | 5 | |
| Minimum cathode current | IZ,min | 41 | 60 | μA | 25°C | 5 | |
| Minimum cathode current | IZ,min | 65 | μA | full range TA = –40°C to 85°C | 5 | ||
| Average temperature coefficient of reverse breakdown voltage | αVZ | -20 | 20 | ppm/°C | IZ = 10mA, 25°C | 5 | |
| Average temperature coefficient of reverse breakdown voltage | αVZ | -15 | 15 | ppm/°C | IZ = 1mA, 25°C | 5 | |
| Average temperature coefficient of reverse breakdown voltage | αVZ | -50 | 50 | ppm/°C | IZ = 100μA, full range TA = –40°C to 85°C | 5 | |
| Change in reverse breakdown voltage with cathode current | VZ | 0.3 | 0.8 | mV | IZ,min < IZ < 1mA, 25°C | 5 | |
| Change in reverse breakdown voltage with cathode current | VZ | 1.2 | mV | IZ,min < IZ < 1mA, full range TA = –40°C to 85°C | 5 | ||
| Change in reverse breakdown voltage with cathode current | VZ | 2.3 | 6 | mV | 1mA < IZ < 15mA, 25°C | 5 | |
| Change in reverse breakdown voltage with cathode current | VZ | 8 | mV | 1mA < IZ < 15mA, full range TA = –40°C to 85°C | 5 | ||
| Reverse breakdown voltage | VZ | 2.5 | V | IZ = 100μA, 25°C | 5 | ||
| Reverse dynamic impedance | ZZ | 0.3 | Ω | IZ = 1mA, f = 120Hz, IAC = 0.1 IZ, 25°C | 5 | ||
| Broadband noise | eN | 41 | μVRMS | IZ = 100μA, 10Hz ≤ f ≤ 10kHz, 25°C | 5 | ||
| Long-term stability of reverse breakdown voltage | 120 | ppm | t = 1000 h, TA = 25°C ± 0.1°C, IZ = 100μA | 5 | |||
| Thermal hysteresis | VHYST | 0.7 | mV | ΔTA = –40°C to 125°C | 5 | ||
| Continuous cathode current | IZ | -10 | 20 | mA | 4 | ||
| Operating virtual junction temperature | TJ | 150 | °C | 4 | |||
| Storage temperature range | Tstg | -65 | 150 | °C | 4 | ||
| Package thermal impedance (DCK package) | θJA | 252 | °C/W | DCK package, per JESD 51-7 | 4 | ||
| Electrostatic discharge, human body model | V(ESD) | -2000 | 2000 | V | HBM per ANSI/ESDA/JEDEC JS-001 | 4 | |
| Electrostatic discharge, charged device model | V(ESD) | -500 | 500 | V | CDM per JEDEC JESD22-C101 | 4 | |
| Cathode current | IZ | 15 | mA | see parameter table (footnote 1) | 4 | ||
| Ambient temperature, industrial (I) grade | TA | -40 | 85 | °C | TL4050xI, natural ventilation | 4 |
CAD (KiCad official)
- Symbol:
TL4050A25IDCKR - Footprint:
Package_TO_SOT_SMD:SOT-353_SC-70-5 - 3D model: SC-70-5 (KiCad packages3D, STEP)
- 3D model files:
tl4050a25idckr-etched.step/tl4050a25idckr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tl4050a25idckr.step/tl4050a25idckr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Texas Instruments datasheet (41 pp, sha256
9518f91a68f71d48, retrieved 2026-10-08, tier: lcsc) - Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TL4050A25IDCKR
**Texas Instruments** · Voltage Reference · SC-70-5
TL4050A25IDCKR from Texas Instruments, in a SC-70-5. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | ANODE | passive | Anode (shunt reference return) terminal of the two-terminal TL4050 reference. |
| 2 | * | passive | Starred pin that TI recommends connecting to the anode in applications with high EMI (for example near transformers or other EMI sources) or significant high-frequency switching noise. |
| 3 | CATHODE | passive | Cathode terminal that carries the reference voltage VZ (2.5 V for this device), with operating cathode current up to 15 mA and a minimum of 41 µA typical. |
| 4 | NC | unconnected | No internal connection. |
| 5 | NC | unconnected | No internal connection. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Texas Instruments |
| Package | SC-70-5 |
| Category | Power Management (PMIC) |
| Pins | 5 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Reverse breakdown voltage tolerance | ΔVZ | -2.5 | | 2.5 | mV | IZ = 100μA, 25°C | 5 |
| Reverse breakdown voltage tolerance | ΔVZ | -11 | | 11 | mV | IZ = 100μA, full range TA = –40°C to 85°C | 5 |
| Minimum cathode current | IZ,min | | 41 | 60 | μA | 25°C | 5 |
| Minimum cathode current | IZ,min | | | 65 | μA | full range TA = –40°C to 85°C | 5 |
| Average temperature coefficient of reverse breakdown voltage | αVZ | -20 | | 20 | ppm/°C | IZ = 10mA, 25°C | 5 |
| Average temperature coefficient of reverse breakdown voltage | αVZ | -15 | | 15 | ppm/°C | IZ = 1mA, 25°C | 5 |
| Average temperature coefficient of reverse breakdown voltage | αVZ | -50 | | 50 | ppm/°C | IZ = 100μA, full range TA = –40°C to 85°C | 5 |
| Change in reverse breakdown voltage with cathode current | VZ | | 0.3 | 0.8 | mV | IZ,min < IZ < 1mA, 25°C | 5 |
| Change in reverse breakdown voltage with cathode current | VZ | | | 1.2 | mV | IZ,min < IZ < 1mA, full range TA = –40°C to 85°C | 5 |
| Change in reverse breakdown voltage with cathode current | VZ | | 2.3 | 6 | mV | 1mA < IZ < 15mA, 25°C | 5 |
| Change in reverse breakdown voltage with cathode current | VZ | | | 8 | mV | 1mA < IZ < 15mA, full range TA = –40°C to 85°C | 5 |
| Reverse breakdown voltage | VZ | | 2.5 | | V | IZ = 100μA, 25°C | 5 |
| Reverse dynamic impedance | ZZ | | 0.3 | | Ω | IZ = 1mA, f = 120Hz, IAC = 0.1 IZ, 25°C | 5 |
| Broadband noise | eN | | 41 | | μVRMS | IZ = 100μA, 10Hz ≤ f ≤ 10kHz, 25°C | 5 |
| Long-term stability of reverse breakdown voltage | | | 120 | | ppm | t = 1000 h, TA = 25°C ± 0.1°C, IZ = 100μA | 5 |
| Thermal hysteresis | VHYST | | 0.7 | | mV | ΔTA = –40°C to 125°C | 5 |
| Continuous cathode current | IZ | -10 | | 20 | mA | | 4 |
| Operating virtual junction temperature | TJ | | | 150 | °C | | 4 |
| Storage temperature range | Tstg | -65 | | 150 | °C | | 4 |
| Package thermal impedance (DCK package) | θJA | | 252 | | °C/W | DCK package, per JESD 51-7 | 4 |
| Electrostatic discharge, human body model | V(ESD) | -2000 | | 2000 | V | HBM per ANSI/ESDA/JEDEC JS-001 | 4 |
| Electrostatic discharge, charged device model | V(ESD) | -500 | | 500 | V | CDM per JEDEC JESD22-C101 | 4 |
| Cathode current | IZ | | | 15 | mA | see parameter table (footnote 1) | 4 |
| Ambient temperature, industrial (I) grade | TA | -40 | | 85 | °C | TL4050xI, natural ventilation | 4 |
## CAD (KiCad official)
- Symbol: `TL4050A25IDCKR`
- Footprint: `Package_TO_SOT_SMD:SOT-353_SC-70-5`
- 3D model: SC-70-5 (KiCad packages3D, STEP)
- 3D model files: `tl4050a25idckr-etched.step` / `tl4050a25idckr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tl4050a25idckr.step` / `tl4050a25idckr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Texas Instruments datasheet](https://www.ti.com/cn/lit/gpn/tl4050a) (41 pp, sha256 `9518f91a68f71d48`, retrieved 2026-10-08, tier: lcsc)
- **Datasheet language:** Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tl4050a25idckr-datasheet.pdf)