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Contents

README

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TK90S06N1L

TOSHIBA · MOSFETs · DPAK

TK90S06N1L from TOSHIBA, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-source voltage limited to ±20 V (VGSS) with threshold Vth of 1.5 to 2.5 V at VDS = 10 V, ID = 0.5 mA.
2 Drain passive Drain terminal, also the heatsink tab; drain-source voltage is 60 V (VDSS) and DC drain current is 90 A.
3 Source passive Source terminal of the N-channel MOSFET with RDS(ON) of 2.7 mΩ typ. at VGS = 10 V.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package DPAK
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate leakage current IGSS -1 1 µA VGS = ±20 V, VDS = 0 V 3
Drain cut-off current IDSS 10 µA VDS = 60 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS 60 V ID = 10 mA, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSX 40 V ID = 10 mA, VGS = -20 V 3
Gate threshold voltage Vth 1.5 2.5 V VDS = 10 V, ID = 0.5 mA 3
Drain-source on-resistance RDS(ON) 3.8 5.2 mΩ VGS = 4.5 V, ID = 45 A 3
Drain-source on-resistance RDS(ON) 2.7 3.3 mΩ VGS = 10 V, ID = 45 A 3
Reverse drain current (DC) IDR 90 A 3
Reverse drain current (pulsed) IDRP 180 A 3
Diode forward voltage VDSF -1.2 V IDR = 90 A, VGS = 0 V 3
Drain-source voltage VDSS 60 V Ta = 25 2
Gate-source voltage VGSS -20 20 V Ta = 25 2
Drain current (DC) ID 90 A Tc = 25 2
Drain current (pulsed) IDP 180 A 2
Power dissipation PD 157 W Tc = 25 2
Single-pulse avalanche energy EAS 95 mJ VDD = 48 V, Tch = 25 (initial), L = 9.1 µH, RG = 25 Ω, IAS = 90 A 2
Single-pulse avalanche current IAS 90 A 2
Turn-off dVDS/dt ruggedness dVDS/dt 2.3 V/ns 2
Channel temperature Tch 175 °C 2
Storage temperature Tstg -55 175 °C 2
Channel-to-case thermal resistance Rth(ch-c) 0.95 °C/W 2
Input capacitance Ciss 5400 pF VDS = 10 V, VGS = 0 V, f = 300 kHz 3
Reverse transfer capacitance Crss 350 pF VDS = 10 V, VGS = 0 V, f = 300 kHz 3
Output capacitance Coss 2630 pF VDS = 10 V, VGS = 0 V, f = 300 kHz 3
Rise time tr 11 ns VDD ≈ 30 V, VGS = 0 V/10 V, ID = 45 A, RL = 0.75 Ω 3
Turn-on time ton 27 ns VDD ≈ 30 V, VGS = 0 V/10 V, ID = 45 A, RL = 0.75 Ω 3
Fall time tf 22 ns VDD ≈ 30 V, VGS = 0 V/10 V, ID = 45 A, RL = 0.75 Ω 3
Turn-off time toff 87 ns VDD ≈ 30 V, VGS = 0 V/10 V, ID = 45 A, RL = 0.75 Ω 3
Total gate charge Qg 81 nC VDD ≈ 48 V, VGS = 10 V, ID = 90 A 3
Gate-source charge 1 Qgs1 19 nC VDD ≈ 48 V, VGS = 10 V, ID = 90 A 3
Gate-drain charge Qgd 17 nC VDD ≈ 48 V, VGS = 10 V, ID = 90 A 3
Reverse recovery time trr 86 ns IDR = 90 A, VGS = 0 V, -dIDR/dt = 50 A/µs 3
Reverse recovery charge Qrr 76 nC IDR = 90 A, VGS = 0 V, -dIDR/dt = 50 A/µs 3

CAD (KiCad official)

  • Symbol: TK90S06N1L
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: tk90s06n1l-etched.step / tk90s06n1l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tk90s06n1l.step / tk90s06n1l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (9 pp, sha256 49bd21ffda4f65b8, retrieved 2026-10-27, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF