TK6A60D from TOSHIBA, in a TO-220F-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	Gate	input	Gate terminal; gate-source voltage limited to ±30 V (VGSS) with threshold Vth of 2.0 to 4.0 V at VDS = 10 V, ID = 1 mA.
2	Drain	passive	Drain terminal; drain-source voltage up to 600 V (VDSS) with DC drain current of 6 A and pulsed 24 A.
3	Source	passive	Source terminal; continuous drain reverse current through the body diode is 6 A and pulsed 24 A.

Key specifications

Parameter	Value
Manufacturer	TOSHIBA
Package	TO-220F-3
Category	Triode/MOS Tube/Transistor
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Gate leakage current	IGSS	-1		1	μA	VGS = ±30 V, VDS = 0 V	2
Drain cut-off current	IDSS			10	μA	VDS = 600 V, VGS = 0 V	2
Drain-source breakdown voltage	V(BR)DSS	600			V	ID = 10 mA, VGS = 0 V	2
Gate threshold voltage	Vth	2		4	V	VDS = 10 V, ID = 1 mA	2
Drain-source ON-resistance	RDS(ON)		1	1.25	Ω	VGS = 10 V, ID = 3 A	2
Forward transfer admittance	/Yfs/	0.8	3		S	VDS = 10 V, ID = 3 A	2
Forward voltage (diode)	VDSF			-1.7	V	IDR = 6 A, VGS = 0 V	2
Continuous drain reverse current	IDR			6	A		2
Pulse drain reverse current	IDRP			24	A		2
Drain-source voltage	VDSS			600	V	Ta = 25°C	1
Gate-source voltage	VGSS	-30		30	V	Ta = 25°C	1
Drain current DC	ID			6	A	Ta = 25°C	1
Drain current pulse	IDP			24	A	Ta = 25°C	1
Drain power dissipation	PD			40	W	Tc = 25°C	1
Single pulse avalanche energy	EAS			173	mJ	VDD = 90 V, Tch = 25°C (initial), L = 8.4 mH, RG = 25 Ω, IAR = 6 A	1
Avalanche current	IAR			6	A	Ta = 25°C	1
Repetitive avalanche energy	EAR			4	mJ	Pulse width limited by maximum channel temperature	1
Channel temperature	Tch			150	°C		1
Storage temperature range	Tstg	-55		150	°C		1
Thermal resistance, channel to case	Rth(ch-c)			3.125	°C/W		1
Thermal resistance, channel to ambient	Rth(ch-a)			62.5	°C/W		1
Input capacitance	Ciss		800		pF	VDS = 25 V, VGS = 0 V, f = 1 MHz	2
Reverse transfer capacitance	Crss		4		pF	VDS = 25 V, VGS = 0 V, f = 1 MHz	2
Output capacitance	Coss		100		pF	VDS = 25 V, VGS = 0 V, f = 1 MHz	2
Rise time	tr		20		ns	Duty ≤ 1%, tw = 10 μs	2
Turn-on time	ton		40		ns	Duty ≤ 1%, tw = 10 μs	2
Fall time	tf		12		ns	Duty ≤ 1%, tw = 10 μs	2
Turn-off time	toff		60		ns	Duty ≤ 1%, tw = 10 μs	2
Total gate charge	Qg		16		nC	VDD ≈ 400 V, VGS = 10 V, ID = 6A	2
Gate-source charge	Qgs		10		nC	VDD ≈ 400 V, VGS = 10 V, ID = 6A	2
Gate-drain charge	Qgd		6		nC	VDD ≈ 400 V, VGS = 10 V, ID = 6A	2
Reverse recovery time	trr		1200		ns	IDR = 6 A, VGS = 0 V, dIDR/dt = 100 A/μs	2
Reverse recovery charge	Qrr		10		μC	IDR = 6 A, VGS = 0 V, dIDR/dt = 100 A/μs	2

CAD (KiCad official)

Symbol: TK6A60D
Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
3D model: TO-220F-3 (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: TOSHIBA datasheet (6 pp, sha256 4a688773206f1e29, retrieved 2026-10-31, tier: manufacturer)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

TK6A60D

Verified TK6A60D

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3D Model

Symbol & Footprint

Schematic Symbol

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Datasheet

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