component

TK5R1P08QM

Public Made by Adom

by adom

TOSHIBA MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TK5R1P08QM

TOSHIBA · MOSFETs · DPAK

TK5R1P08QM from TOSHIBA, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal with gate-source voltage limit of ±20 V and threshold voltage Vth of 2.5 to 3.5 V (VDS = 10 V, ID = 0.7 mA).
2 Drain passive Drain terminal, connected to the heatsink tab, with drain-source voltage rating of 80 V and DC drain current of 84 A (package limited).
3 Source passive Source terminal of the N-channel MOSFET, with RDS(ON) of 4.2 mΩ typ. (VGS = 10 V).

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package DPAK
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 80 V Ta = 25 °C 2
Gate-source voltage VGSS -20 20 V Ta = 25 °C 2
Drain current (DC) ID 84 A Tc = 25 °C, limited by package capability 2
Drain current (DC), silicon limit ID 105 A Tc = 25 °C, silicon limit 2
Drain current (pulsed) IDP 298 A t = 100 µs 2
Power dissipation PD 104 W Tc = 25 °C 2
Single-pulse avalanche energy EAS 33 mJ VDD = 64 V, Tch = 25 °C (initial), L = 3.7 µH, IAS = 84 A 2
Single-pulse avalanche current IAS 84 A VDD = 64 V, Tch = 25 °C (initial), L = 3.7 µH 2
Channel temperature Tch 175 °C 2
Storage temperature Tstg -55 175 °C 2
Channel-to-case thermal resistance Rth(ch-c) 1.43 °C/W Tc = 25 °C 2
Gate leakage current IGSS -0.1 0.1 µA VGS = ±20 V, VDS = 0 V 3
Drain cut-off current IDSS 10 µA VDS = 80 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS 80 V ID = 10 mA, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSX 60 V ID = 10 mA, VGS = -20 V 3
Gate threshold voltage Vth 2.5 3.5 V VDS = 10 V, ID = 0.7 mA 3
Drain-source on-resistance RDS(ON) 5.2 7 mΩ VGS = 6 V, ID = 20 A 3
Drain-source on-resistance RDS(ON) 4.2 5.1 mΩ VGS = 10 V, ID = 42 A 3
Gate resistance rg 1.6 2.4 Ω VDS = 40 V, VGS = 0 V, f = 1 MHz 3
Reverse drain current (pulsed) IDRP 298 A t = 100 µs 4
Diode forward voltage VDSF -1.2 V IDR = 42 A, VGS = 0 V 4

CAD (KiCad official)

  • Symbol: TK5R1P08QM
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: DPAK (KiCad packages3D, STEP)
  • 3D model files: tk5r1p08qm-etched.step / tk5r1p08qm-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tk5r1p08qm.step / tk5r1p08qm.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (9 pp, sha256 b20fadf11dcc3df6, retrieved 2026-10-26, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF