# TK49N65W5

**TOSHIBA** · MOSFETs · TO-247

TK49N65W5 from TOSHIBA, in a TO-247. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; the datasheet gives no pin-specific voltage or current limit, so the device VGSS rating of ±30 V applies. |
| 2 | Drain | passive | Drain terminal, electrically connected to the heatsink tab of the TO-247 package; the datasheet gives no pin-specific limit, so the device VDSS rating of 650 V and ID of 49.2 A apply. |
| 3 | Source | passive | Source terminal of the MOSFET; the datasheet gives no pin-specific limit, so the device absolute maximum ratings apply. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-247 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS |  |  | 650 | V |  | 2 |
| Gate-source voltage | VGSS | -30 |  | 30 | V |  | 2 |
| Drain current (DC) | ID |  |  | 49.2 | A | Tc = 25 (Note 1) | 2 |
| Drain current (pulsed) | IDP |  |  | 196 | A |  | 2 |
| Power dissipation | PD |  |  | 400 | W | Tc = 25 | 2 |
| Single-pulse avalanche energy | EAS |  |  | 764 | mJ | VDD = 90 V, Tch = 25 (initial), L = 8 mH, RG = 25 Ω, IAR = 13 A | 2 |
| Avalanche current | IAR |  |  | 13 | A |  | 2 |
| Reverse drain current (DC) | IDR |  |  | 49.2 | A |  | 2 |
| Reverse drain current (pulsed) | IDRP |  |  | 196 | A |  | 2 |
| Channel temperature | Tch |  |  | 150 | °C |  | 2 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 2 |
| Mounting torque | TOR |  |  | 0.8 | Nm |  | 2 |
| Channel-to-case thermal resistance | Rth(ch-c) |  |  | 0.313 | /W |  | 2 |
| Channel-to-ambient thermal resistance | Rth(ch-a) |  |  | 50 | /W |  | 2 |
| Gate leakage current | IGSS | -1 |  | 1 | µA | VGS = ±30 V, VDS = 0 V | 3 |
| Drain cut-off current | IDSS |  |  | 100 | µA | VDS = 650 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 650 |  |  | V | ID = 10 mA, VGS = 0 V | 3 |
| Gate threshold voltage | Vth | 3 |  | 4.5 | V | VDS = 10 V, ID = 2.5 mA | 3 |
| Drain-source on-resistance | RDS(ON) |  | 0.051 | 0.057 | Ω | VGS = 10 V, ID = 24.6 A | 3 |
| MOSFET dv/dt ruggedness | dv/dt | 50 |  |  | V/ns | VDD = 0 to 400 V, ID = 24.6 A | 3 |
| Reverse recovery time | trr |  | 145 | 232 | ns | IDR = 24.6 A, VGS = 0 V, -dIDR/dt = 100 A/µs | 3 |
| Diode forward voltage | VDSF |  |  | -1.7 | V | IDR = 49.2 A, VGS = 0 V | 3 |

## CAD (KiCad official)

- Symbol: `TK49N65W5`
- Footprint: `Package_TO_SOT_THT:TO-247-3_Vertical`
- 3D model: TO-247 (KiCad packages3D, STEP)
- 3D model files: `tk49n65w5-etched.step` / `tk49n65w5-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tk49n65w5.step` / `tk49n65w5.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](docs/tk49n65w5-datasheet.pdf) (10 pp, sha256 `0a2761a6906903f0`, retrieved 2026-11-07, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tk49n65w5-datasheet.pdf)