component
TK40E06N1
Public Made by Adomby adom
TOSHIBA MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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TK40E06N1
TOSHIBA · MOSFETs · TO-220
TK40E06N1 from TOSHIBA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage limited to ±20 V with threshold Vth of 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA). |
| 2 | Drain | passive | Drain terminal, connected to the heatsink tab; drain-source voltage rated 60 V with DC drain current of 40 A (Tc = 25°C). |
| 3 | Source | passive | Source terminal; reverse drain (body diode) current is 40 A DC and 125 A pulsed. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -0.1 | 0.1 | µA | VGS = ±20 V, VDS = 0 V | 3 | |
| Drain cut-off current | IDSS | 10 | µA | VDS = 60 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 60 | V | ID = 10 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSX | 45 | V | ID = 10 mA, VGS = -20 V | 3 | ||
| Gate threshold voltage | Vth | 2 | 4 | V | VDS = 10 V, ID = 0.3 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 8.4 | 10.4 | mΩ | VGS = 10 V, ID = 20 A | 3 | |
| Reverse drain current (DC) | IDR | 40 | A | 4 | |||
| Reverse drain current (pulsed) | IDRP | 125 | A | 4 | |||
| Diode forward voltage | VDSF | -1.2 | V | IDR = 40 A, VGS = 0 V | 4 | ||
| Drain-source voltage | VDSS | 60 | V | Ta = 25 | 1 | ||
| Gate-source voltage | VGSS | -20 | 20 | V | Ta = 25 | 1 | |
| Drain current (DC) (Silicon limit) | ID | 60 | A | Silicon limit | 1 | ||
| Drain current (DC) | ID | 40 | A | 1 | |||
| Drain current (pulsed) | IDP | 125 | A | t = 1 ms | 1 | ||
| Power dissipation | PD | 67 | W | Tc = 25 | 1 | ||
| Single-pulse avalanche energy | EAS | 40 | mJ | VDD = 48 V, Tch = 25 (initial), L = 19.2 µH, IAR = 40 A | 1 | ||
| Avalanche current | IAR | 40 | A | 1 | |||
| Channel temperature | Tch | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Channel-to-case thermal resistance | Rth(ch-c) | 1.84 | °C/W | 2 | |||
| Channel-to-ambient thermal resistance | Rth(ch-a) | 83.3 | °C/W | 2 | |||
| Input capacitance | Ciss | 1700 | pF | VDS = 30 V, VGS = 0 V, f = 1 MHz | 3 | ||
| Reverse transfer capacitance | Crss | 40 | pF | VDS = 30 V, VGS = 0 V, f = 1 MHz | 3 | ||
| Output capacitance | Coss | 580 | pF | VDS = 30 V, VGS = 0 V, f = 1 MHz | 3 | ||
| Gate resistance | rg | 2 | Ω | 3 | |||
| Rise time | tr | 14 | ns | See Figure 6.2.1 | 3 | ||
| Turn-on time | ton | 30 | ns | See Figure 6.2.1 | 3 | ||
| Fall time | tf | 13 | ns | See Figure 6.2.1 | 3 | ||
| Turn-off time | toff | 36 | ns | See Figure 6.2.1 | 3 | ||
| Total gate charge | Qg | 23 | nC | VDD ≈ 48 V, VGS = 10 V, ID = 40 A | 3 | ||
| Gate-source charge 1 | Qgs1 | 8 | nC | VDD ≈ 48 V, VGS = 10 V, ID = 40 A | 3 | ||
| Gate-drain charge | Qgd | 7 | nC | VDD ≈ 48 V, VGS = 10 V, ID = 40 A | 3 | ||
| Gate switch charge | QSW | 10 | nC | VDD ≈ 48 V, VGS = 10 V, ID = 40 A | 3 | ||
| Reverse recovery time | trr | 46 | ns | IDR = 40 A, VGS = 0 V, -dIDR/dt = 100 A/µs | 4 | ||
| Reverse recovery charge | Qrr | 62 | nC | IDR = 40 A, VGS = 0 V, -dIDR/dt = 100 A/µs | 4 |
CAD (KiCad official)
- Symbol:
TK40E06N1 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
tk40e06n1-etched.step/tk40e06n1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tk40e06n1.step/tk40e06n1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
17a1c8b98643227d, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# TK40E06N1
**TOSHIBA** · MOSFETs · TO-220
TK40E06N1 from TOSHIBA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage limited to ±20 V with threshold Vth of 2.0 to 4.0 V (VDS = 10 V, ID = 0.3 mA). |
| 2 | Drain | passive | Drain terminal, connected to the heatsink tab; drain-source voltage rated 60 V with DC drain current of 40 A (Tc = 25°C). |
| 3 | Source | passive | Source terminal; reverse drain (body diode) current is 40 A DC and 125 A pulsed. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -0.1 | | 0.1 | µA | VGS = ±20 V, VDS = 0 V | 3 |
| Drain cut-off current | IDSS | | | 10 | µA | VDS = 60 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 60 | | | V | ID = 10 mA, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSX | 45 | | | V | ID = 10 mA, VGS = -20 V | 3 |
| Gate threshold voltage | Vth | 2 | | 4 | V | VDS = 10 V, ID = 0.3 mA | 3 |
| Drain-source on-resistance | RDS(ON) | | 8.4 | 10.4 | mΩ | VGS = 10 V, ID = 20 A | 3 |
| Reverse drain current (DC) | IDR | | | 40 | A | | 4 |
| Reverse drain current (pulsed) | IDRP | | | 125 | A | | 4 |
| Diode forward voltage | VDSF | | | -1.2 | V | IDR = 40 A, VGS = 0 V | 4 |
| Drain-source voltage | VDSS | | | 60 | V | Ta = 25 | 1 |
| Gate-source voltage | VGSS | -20 | | 20 | V | Ta = 25 | 1 |
| Drain current (DC) (Silicon limit) | ID | | | 60 | A | Silicon limit | 1 |
| Drain current (DC) | ID | | | 40 | A | | 1 |
| Drain current (pulsed) | IDP | | | 125 | A | t = 1 ms | 1 |
| Power dissipation | PD | | | 67 | W | Tc = 25 | 1 |
| Single-pulse avalanche energy | EAS | | | 40 | mJ | VDD = 48 V, Tch = 25 (initial), L = 19.2 µH, IAR = 40 A | 1 |
| Avalanche current | IAR | | | 40 | A | | 1 |
| Channel temperature | Tch | | | 150 | °C | | 1 |
| Storage temperature | Tstg | -55 | | 150 | °C | | 1 |
| Channel-to-case thermal resistance | Rth(ch-c) | | | 1.84 | °C/W | | 2 |
| Channel-to-ambient thermal resistance | Rth(ch-a) | | | 83.3 | °C/W | | 2 |
| Input capacitance | Ciss | | 1700 | | pF | VDS = 30 V, VGS = 0 V, f = 1 MHz | 3 |
| Reverse transfer capacitance | Crss | | 40 | | pF | VDS = 30 V, VGS = 0 V, f = 1 MHz | 3 |
| Output capacitance | Coss | | 580 | | pF | VDS = 30 V, VGS = 0 V, f = 1 MHz | 3 |
| Gate resistance | rg | | 2 | | Ω | | 3 |
| Rise time | tr | | 14 | | ns | See Figure 6.2.1 | 3 |
| Turn-on time | ton | | 30 | | ns | See Figure 6.2.1 | 3 |
| Fall time | tf | | 13 | | ns | See Figure 6.2.1 | 3 |
| Turn-off time | toff | | 36 | | ns | See Figure 6.2.1 | 3 |
| Total gate charge | Qg | | 23 | | nC | VDD ≈ 48 V, VGS = 10 V, ID = 40 A | 3 |
| Gate-source charge 1 | Qgs1 | | 8 | | nC | VDD ≈ 48 V, VGS = 10 V, ID = 40 A | 3 |
| Gate-drain charge | Qgd | | 7 | | nC | VDD ≈ 48 V, VGS = 10 V, ID = 40 A | 3 |
| Gate switch charge | QSW | | 10 | | nC | VDD ≈ 48 V, VGS = 10 V, ID = 40 A | 3 |
| Reverse recovery time | trr | | 46 | | ns | IDR = 40 A, VGS = 0 V, -dIDR/dt = 100 A/µs | 4 |
| Reverse recovery charge | Qrr | | 62 | | nC | IDR = 40 A, VGS = 0 V, -dIDR/dt = 100 A/µs | 4 |
## CAD (KiCad official)
- Symbol: `TK40E06N1`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `tk40e06n1-etched.step` / `tk40e06n1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tk40e06n1.step` / `tk40e06n1.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [TOSHIBA datasheet](docs/tk40e06n1-datasheet.pdf) (9 pp, sha256 `17a1c8b98643227d`, retrieved 2026-10-22, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/tk40e06n1-datasheet.pdf)