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Contents

README

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TK3R2A10PL-VB

VBsemi Elec · MOSFETs · TO-220F

TK3R2A10PL-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate control input of the N-channel MOSFET, with a maximum gate-source voltage of ±20 V and a threshold of 2.5 V min to 3.5 V max at ID = 250 µA.
2 D passive Drain terminal of the N-channel MOSFET, rated for VDS of 100 V and a continuous drain current of 120 A (package limited) at TC = 25 °C.
3 S passive Source terminal of the N-channel MOSFET, with a continuous source (diode) current rating of 120 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220F
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: TK3R2A10PL-VB
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 8f79a54c18756d63, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF