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TK39N60W5

Public Made by Adom

by adom

TOSHIBA MOSFETs, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TK39N60W5

TOSHIBA · MOSFETs · TO-247-3

TK39N60W5 from TOSHIBA, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate of the MOSFET, with a gate-source voltage limit of ±30 V (VGSS) and a gate threshold voltage Vth of 3 to 4.5 V at VDS = 10 V, ID = 1.9 mA.
2 Drain (Heatsink) passive Drain terminal, also the heatsink tab of the package; drain-source voltage is rated 600 V (VDSS) and continuous drain current 38.8 A.
3 Source passive Source terminal of the MOSFET; the body diode reverse drain current (DC) is rated 38.8 A, and channel temperature must not exceed 150 °C.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 600 V 2
Gate-source voltage VGSS -30 30 V 2
Drain current (DC) ID 38.8 A 2
Drain current (pulsed) IDP 155 A 2
Power dissipation PD 270 W 2
Single-pulse avalanche energy EAS 608 mJ Note 2: VDD = 90 V, Tch = 25, L = 11.3 mH, RG = 25 Ω, IAR = 9.7 A 2
Avalanche current IAR 9.7 A 2
Reverse drain current (DC) IDR 38.8 A 2
Reverse drain current (pulsed) IDRP 155 A 2
Channel temperature Tch 150 °C Note 1: channel temperature must not exceed 150 2
Storage temperature Tstg -55 150 °C 2
Mounting torque TOR 0.8 Nm 2
Channel-to-case thermal resistance Rth(ch-c) 0.463 /W 2
Channel-to-ambient thermal resistance Rth(ch-a) 50 /W 2
Gate leakage current IGSS -1 1 µA VGS = ±30 V, VDS = 0 V 3
Drain cut-off current IDSS 100 µA VDS = 600 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS 600 V ID = 10 mA, VGS = 0 V 3
Gate threshold voltage Vth 3 4.5 V VDS = 10 V, ID = 1.9 mA 3
Drain-source on-resistance RDS(ON) 0.062 0.074 Ω VGS = 10 V, ID = 19.4 A 3
MOSFET dv/dt ruggedness dv/dt 50 V/ns 3
Diode forward voltage VDSF -1.7 V IDR = 38.8 A, VGS = 0 V 3
Reverse recovery time trr 240 ns IDR = 19.4 A, VGS = 0 V, -dIDR/dt = 100 A/µs 3
Diode dv/dt ruggedness dv/dt 50 V/ns IDR = 19.4 A, VGS = 0 V, VDD = 400 V 3

CAD (KiCad official)

  • Symbol: TK39N60W5
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: tk39n60w5-etched.step / tk39n60w5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tk39n60w5.step / tk39n60w5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (10 pp, sha256 9d94d7f99aac9b3a, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF