# TK33S10N1Z

**TOSHIBA** · MOSFETs · DPAK

TK33S10N1Z from TOSHIBA, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal; gate-source voltage rated ±20 V absolute maximum with threshold Vth of 2.0 to 4.0 V (VDS = 10 V, ID = 0.5 mA). |
| 2 | Drain | passive | Drain terminal, connected to the heatsink tab; drain-source voltage rated 100 V and DC drain current 33 A at Tc = 25 °C. |
| 3 | Source | passive | Source terminal of the N-channel MOSFET; reverse drain (body diode) current is rated 33 A DC. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | DPAK |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate leakage current | IGSS | -10 |  | 10 | µA | VGS = ±16 V, VDS = 0 V | 3 |
| Drain cut-off current | IDSS |  |  | 10 | µA | VDS = 100 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 100 |  |  | V | ID = 10 mA, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSX | 65 |  |  | V | ID = 10 mA, VGS = -20 V | 3 |
| Gate threshold voltage | Vth | 2 |  | 4 | V | VDS = 10 V, ID = 0.5 mA | 3 |
| Drain-source on-resistance | RDS(ON) |  | 8.2 | 9.7 | mΩ | VGS = 10 V, ID = 16.5 A | 3 |
| Reverse drain current (DC) | IDR |  |  | 33 | A |  | 3 |
| Reverse drain current (pulsed) | IDRP |  |  | 99 | A |  | 3 |
| Diode forward voltage | VDSF |  |  | -1.2 | V | IDR = 33 A, VGS = 0 V | 3 |
| Channel-to-case thermal resistance | Rth(ch-c) |  |  | 1.2 | /W |  | 2 |
| Drain-source voltage | VDSS |  |  | 100 | V | Ta = 25 | 1 |
| Gate-source voltage | VGSS | -20 |  | 20 | V | Ta = 25 | 1 |
| Drain current (DC) | ID |  |  | 33 | A | Tc = 25 | 1 |
| Drain current (pulsed) | IDP |  |  | 99 | A |  | 1 |
| Power dissipation | PD |  |  | 125 | W | Tc = 25 | 1 |
| Single-pulse avalanche current | IAS |  |  | 33 | A |  | 1 |
| Turn-off dVDS/dt ruggedness | dVDS/dt |  |  | 8.4 | V/ns |  | 1 |
| Channel temperature | Tch |  |  | 175 | °C |  | 1 |
| Storage temperature | Tstg | -55 |  | 175 | °C |  | 1 |
| Input capacitance | Ciss |  | 2050 |  | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 3 |
| Reverse transfer capacitance | Crss |  | 140 |  | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 3 |
| Output capacitance | Coss |  | 1070 |  | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 3 |

## CAD (KiCad official)

- Symbol: `TK33S10N1Z`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files: `tk33s10n1z-etched.step` / `tk33s10n1z-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tk33s10n1z.step` / `tk33s10n1z.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](docs/tk33s10n1z-datasheet.pdf) (9 pp, sha256 `d58a30d270e4bdbf`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tk33s10n1z-datasheet.pdf)