component
TK2P90E
Public Made by Adomby adom
TOSHIBA MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
123456789101112131415161718192021222324252627282930313233343536373839404142434445464748495051525354555657585960616263646566676869707172737475767778798081828384858687888990919293949596979899100101102103104105106107108109110111112113114115116117118119120121122123124125126127128129130131132133134135136137138139140141142143144145146147148149150151152153154155156157158159160161162163164165166167168169170171172173174175176177178179180181182183184185186187188189190191192193194195196197198199200201202203204205206207208209210211212213214215216217218219220221222223224225226227228229230231232233234235236237238239240241242243244245246247248249250251252253254255256257258259260261262263264265266267268269270271272273274275276277278279280281282283284285286287288289290291292293294295296297298299300301302303304305306307308309310311312313314315316317318319320321322323324325326327328329330331332333334335336337338339340341342343344345346347348349350351352353354355356357358359360361362363364365366367368369370371372373374375376377378379380381382383384385386387388389390391392393394395396397398399400401402403404405406407408409410411412413414415416417418419420421422423424425426427
{
"schema_version": 1,
"type": "component",
"slug": "tk2p90e",
"title": "TK2P90E",
"brief": "TOSHIBA MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
"version": "0.1.0",
"license": "CC-BY-SA-4.0",
"tags": [
"component",
"transistors-thyristors",
"tk2p90e",
"factory-2.0.0",
"extractor-text"
],
"component": {
"mpn": "TK2P90E",
"manufacturer": "TOSHIBA",
"package": "DPAK",
"pin_count": 3,
"category": "Transistors/Thyristors",
"subcategory": "MOSFETs",
"datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589785319404179456",
"parts": {
"symbol": "tk2p90e.kicad_sym",
"footprint": "tk2p90e.kicad_mod",
"model_3d": "tk2p90e-hero.glb",
"model_3d_plain": "tk2p90e-etched.glb",
"model_3d_step": "tk2p90e-etched.step",
"model_3d_step_plain": "tk2p90e.step",
"lbr": "tk2p90e.lbr"
},
"distributor_links": {
"lcsc": "C2960440"
},
"distributor_check": {
"checked_at": "2026-10-17T16:11:59Z",
"source": "Component Ocean /api/assign-pns",
"digikey": {
"pn": null,
"status": "quota"
},
"mouser": {
"pn": null,
"status": "quota"
}
},
"pins": [
{
"number": "1",
"name": "Gate",
"type": "input",
"description": "Gate of the N-channel MOSFET; gate-source voltage is rated ±30 V (VGSS absolute maximum)."
},
{
"number": "2",
"name": "Drain",
"type": "passive",
"description": "Drain terminal, also the heatsink tab; drain-source voltage is rated 900 V (VDSS) and DC drain current 2 A, with pulsed drain current 6 A (absolute maximum ratings)."
},
{
"number": "3",
"name": "Source",
"type": "passive",
"description": "Source terminal; reverse drain current is rated 2 A DC and 6 A pulsed (IDR/IDRP absolute maximum ratings)."
}
],
"provenance": {
"extractor": "extract_pins 0.3",
"factory_chain": {
"factory": "2.0.0",
"extractor": "extract_pins 0.3",
"primary_model": "claude-haiku-5-5",
"primary_mode": "text",
"consensus_model": "claude-sonnet-5-5",
"consensus": "agreed",
"guards": "pin_guards 0.1: passed",
"guard_notes": [
"extractor flagged: The datasheet gives a single pinout for the DPAK package (2-7K1S) and no separate variant or orderin"
],
"pages_sent": 9,
"cost_usd": 0.0359,
"at": "2026-10-17T16:09:48"
},
"datasheet": {
"url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589785319404179456",
"pages": 9,
"sha256": "5de9ef20e28df12d",
"source_tier": "lcsc"
},
"cad": "KiCad official (CC-BY-SA 4.0)",
"pins": {
"total": 3,
"described": 3,
"cites_pages": true,
"refuses_to_fabricate": true
}
},
"viewers": {
"symbol": "viewers/symbol.html",
"footprint": "viewers/footprint.html"
},
"models_3d": [
{
"file": "tk2p90e.step",
"role": "plain",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
9.9,
6.5,
2.32
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "3eb4c99603a4fe837c2fe9308bc174769ded87a785a0df48d2dc441432ee8b4c",
"checked": "2026-10-17",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
},
{
"file": "tk2p90e-etched.step",
"role": "eda",
"up": "Z",
"units": "mm",
"origin": "footprint origin = pad-pattern centre",
"seat": "z = 0",
"extents_mm": [
9.9,
6.5,
2.32
],
"zmin_mm": 0,
"centre_offset_mm": 0,
"footprint_binding": "identity",
"sha256": "394b83940bacfd94406d6dd88574077efdf0da4a2e7c37a1b8cfcd7cf0203f5c",
"checked": "2026-10-17",
"checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
}
]
},
"metadata": {
"specs": {
"Manufacturer": "TOSHIBA",
"Package": "DPAK",
"Category": "Transistors/Thyristors",
"Pins": "3"
},
"characteristics": {
"version": 1,
"source": "datasheet",
"datasheet_sha256": "5de9ef20e28df12dbb3cfdbe2f91c0a7d6943279e1e22b7572e8a13792168a32",
"rows": [
{
"name": "Drain-source voltage",
"symbol": "VDSS",
"kind": "absolute_maximum",
"unit": "V",
"min": null,
"typ": null,
"max": 900,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Gate-source voltage",
"symbol": "VGSS",
"kind": "absolute_maximum",
"unit": "V",
"min": -30,
"typ": null,
"max": 30,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain current (DC)",
"symbol": "ID",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 2,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Drain current (pulsed)",
"symbol": "IDP",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 6,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Power dissipation",
"symbol": "PD",
"kind": "absolute_maximum",
"unit": "W",
"min": null,
"typ": null,
"max": 80,
"conditions": "Tc = 25",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Single-pulse avalanche energy",
"symbol": "EAS",
"kind": "absolute_maximum",
"unit": "mJ",
"min": null,
"typ": null,
"max": 157,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Avalanche current",
"symbol": "IAR",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 2,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Reverse drain current (DC)",
"symbol": "IDR",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 2,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Reverse drain current (pulsed)",
"symbol": "IDRP",
"kind": "absolute_maximum",
"unit": "A",
"min": null,
"typ": null,
"max": 6,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Channel temperature",
"symbol": "Tch",
"kind": "absolute_maximum",
"unit": "°C",
"min": null,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Storage temperature",
"symbol": "Tstg",
"kind": "absolute_maximum",
"unit": "°C",
"min": -55,
"typ": null,
"max": 150,
"conditions": "",
"source_page": 1,
"source": "datasheet"
},
{
"name": "Channel-to-case thermal resistance",
"symbol": "Rth(ch-c)",
"kind": "thermal",
"unit": "/W",
"min": null,
"typ": null,
"max": 1.56,
"conditions": "",
"source_page": 2,
"source": "datasheet"
},
{
"name": "Gate leakage current",
"symbol": "IGSS",
"kind": "electrical",
"unit": "µA",
"min": -1,
"typ": null,
"max": 1,
"conditions": "VGS = ±30 V, VDS = 0 V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Drain cut-off current",
"symbol": "IDSS",
"kind": "electrical",
"unit": "µA",
"min": null,
"typ": null,
"max": 10,
"conditions": "VDS = 720 V, VGS = 0 V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Drain-source breakdown voltage",
"symbol": "V(BR)DSS",
"kind": "electrical",
"unit": "V",
"min": 900,
"typ": null,
"max": null,
"conditions": "ID = 10 mA, VGS = 0 V",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Gate threshold voltage",
"symbol": "Vth",
"kind": "electrical",
"unit": "V",
"min": 2.5,
"typ": null,
"max": 4,
"conditions": "VDS = 10 V, ID = 0.2 mA",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Drain-source on-resistance",
"symbol": "RDS(ON)",
"kind": "electrical",
"unit": "Ω",
"min": null,
"typ": 4.7,
"max": 5.9,
"conditions": "VGS = 10 V, ID = 1.0 A",
"source_page": 3,
"source": "datasheet"
},
{
"name": "MOSFET dv/dt ruggedness",
"symbol": "dv/dt",
"kind": "electrical",
"unit": "V/ns",
"min": 10,
"typ": null,
"max": null,
"conditions": "VDD = 0 to 400 V, ID = 2 A",
"source_page": 3,
"source": "datasheet"
},
{
"name": "Diode forward voltage",
"symbol": "VDSF",
"kind": "electrical",
"unit": "V",
"min": null,
"typ": null,
"max": -1.7,
"conditions": "IDR = 2 A, VGS = 0 V",
"source_page": 3,
"source": "datasheet"
}
]
}
},
"variants": [],
"sections": [
"hero",
"viewers",
"readme",
"breadcrumbs",
"info"
],
"discovery_triggers": [
"tk2p90e"
],
"discovery_pitch": "TK2P90E (TOSHIBA) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
"author": {
"name": "Ray",
"email": "[email protected]"
},
"dependencies": {},
"hero": {
"type": "image",
"path": "docs/hero.png"
},
"files": [
"page.json",
"README.md",
"tk2p90e.kicad_sym",
"tk2p90e.kicad_mod",
"tk2p90e.glb",
"tk2p90e.step",
"tk2p90e.lbr",
"docs/hero.png",
"docs/tk2p90e-datasheet.pdf",
"viewers/symbol.html",
"viewers/footprint.html",
"tk2p90e-hero.glb",
"tk2p90e-hero.overlay.json",
"tk2p90e-etched.glb"
],
"visibility": {
"public": true
}
}