component

TK20A60W5

Public Made by Adom

by adom

TOSHIBA MOSFETs, TO-220-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TK20A60W5

TOSHIBA · MOSFETs · TO-220-3

TK20A60W5 from TOSHIBA, in a TO-220-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; enhancement mode with Vth = 3 to 4.5 V (VDS = 10 V, ID = 1 mA) and VGSS rating of ±30 V.
2 Drain passive Drain terminal; drain-source voltage rating VDSS = 600 V and DC drain current ID = 20 A.
3 Source passive Source terminal; connected to the anode of the body diode, with reverse drain current IDR = 20 A (DC).

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package TO-220-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-source voltage VGSS -30 30 V 2
Drain-source voltage VDSS 600 V 2
Drain current (DC) ID 20 A 2
Drain current (pulsed) IDP 80 A 2
Power dissipation PD 45 W Tc = 25 2
Single-pulse avalanche energy EAS 300 mJ VDD = 90 V, Tch = 25 (initial), L = 21 mH, RG = 25 Ω, IAR = 5 A 2
Avalanche current IAR 5 A 2
Reverse drain current (DC) IDR 20 A 2
Reverse drain current (pulsed) IDRP 80 A 2
Channel temperature Tch 150 °C 2
Storage temperature Tstg -55 150 °C 2
Isolation voltage (RMS) VISO(RMS) 2000 V t = 1.0 s 2
Mounting torque TOR 0.6 Nm 2
Channel-to-case thermal resistance Rth(ch-c) 2.78 /W 2
Channel-to-ambient thermal resistance Rth(ch-a) 62.5 /W 2
Gate leakage current IGSS -1 1 µA VGS = ±30 V, VDS = 0 V 3
Drain cut-off current IDSS 100 µA VDS = 600 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS 600 V ID = 10 mA, VGS = 0 V 3
Gate threshold voltage Vth 3 4.5 V VDS = 10 V, ID = 1 mA 3
Drain-source on-resistance RDS(ON) 0.15 0.175 Ω VGS = 10 V, ID = 10 A 3
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDD = 0 to 400 V, ID = 10 A 3
Diode forward voltage VDSF -1.7 V IDR = 20 A, VGS = 0 V 3
Reverse recovery time trr 110 176 ns IDR = 10 A, VGS = 0 V 3
Diode dv/dt ruggedness dv/dt 50 V/ns IDR = 10 A, VGS = 0 V, VDD = 400 V 3

CAD (KiCad official)

  • Symbol: TK20A60W5
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3 (KiCad packages3D, STEP)
  • 3D model files: tk20a60w5-etched.step / tk20a60w5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tk20a60w5.step / tk20a60w5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (10 pp, sha256 7f54cb33345bd44c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF