component

TK1R5R04PB

Public Made by Adom

by adom

TOSHIBA MOSFETs, D2PAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistortk1r5r04pbfactory-2.0.0extractor-text

Verified TK1R5R04PB

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier mfr, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: TK1R5R04PB · D2PAK · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 11-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-263-2
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-v5kia81e/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ tk1r5r04pb.kicad_sym✓ tk1r5r04pb.kicad_mod✓ tk1r5r04pb.step
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Ray Publish 0.1.0 7494e84 7d ago

TK1R5R04PB

TOSHIBA · MOSFETs · D2PAK

TK1R5R04PB from TOSHIBA, in a D2PAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal with gate-source voltage limited to ±20 V and threshold Vth of 2.0 to 3.0 V (VDS = 10 V, ID = 0.5 mA).
2 Drain passive Drain terminal, also the heatsink tab, rated for 40 V drain-source voltage and 160 A DC drain current.
3 Source passive Source terminal of the N-channel MOSFET, with reverse drain current (DC) rated at 160 A.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package D2PAK
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate leakage current IGSS -1 1 µA VGS = ±20 V, VDS = 0 V 4
Drain cut-off current IDSS 10 µA VDS = 40 V, VGS = 0 V 4
Drain-source breakdown voltage V(BR)DSS 40 V ID = 10 mA, VGS = 0 V 4
Drain-source breakdown voltage V(BR)DSX 20 V ID = 10 mA, VGS = -20 V 4
Gate threshold voltage Vth 2 3 V VDS = 10 V, ID = 0.5 mA 4
Drain-source on-resistance RDS(ON) 1.45 2.05 mΩ VGS = 6 V, ID = 80 A 4
Drain-source on-resistance RDS(ON) 1.25 1.5 mΩ VGS = 10 V, ID = 80 A 4
Reverse drain current (DC) IDR 160 A 4
Reverse drain current (pulsed) IDRP 480 A 4
Diode forward voltage VDSF -1.2 V IDR = 160 A, VGS = 0 V 4
Drain-source voltage VDSS 40 V Ta = 25 2
Gate-source voltage VGSS -20 20 V Ta = 25 2
Drain current (DC) ID 160 A Tc = 25 2
Drain current (pulsed) IDP 480 A 2
Power dissipation PD 205 W Tc = 25 2
Single-pulse avalanche energy EAS 377 mJ VDD = 32 V, Tch = 25 (initial), L = 29 µH, RG = 1 Ω, IAS = 100 A, VGS = +15/0 V 2
Single-pulse avalanche current IAS 100 A 2
Channel temperature Tch 175 °C 2
Storage temperature Tstg -55 175 °C 2
Channel-to-case thermal resistance Rth(ch-c) 0.73 °C/W 3
Input capacitance Ciss 5500 pF VDS = 10 V, VGS = 0 V, f = 300 kHz 4
Reverse transfer capacitance Crss 490 pF VDS = 10 V, VGS = 0 V, f = 300 kHz 4
Output capacitance Coss 3400 pF VDS = 10 V, VGS = 0 V, f = 300 kHz 4
Switching time (rise time) tr 14 ns VDD ≈ 20 V, VGS = 0 V/10 V, ID = 80 A, RL = 0.25 Ω, RG = 4.7 Ω 4
Switching time (turn-on time) ton 47 ns VDD ≈ 20 V, VGS = 0 V/10 V, ID = 80 A, RL = 0.25 Ω, RG = 4.7 Ω 4
Switching time (fall time) tf 23 ns VDD ≈ 20 V, VGS = 0 V/10 V, ID = 80 A, RL = 0.25 Ω, RG = 4.7 Ω 4
Switching time (turn-off time) toff 82 ns VDD ≈ 20 V, VGS = 0 V/10 V, ID = 80 A, RL = 0.25 Ω, RG = 4.7 Ω 4
Total gate charge Qg 103 nC VDD ≈ 32 V, VGS = 10 V, ID = 160 A 4
Gate-source charge 1 Qgs1 30 nC VDD ≈ 32 V, VGS = 10 V, ID = 160 A 4
Gate-drain charge Qgd 24 nC VDD ≈ 32 V, VGS = 10 V, ID = 160 A 4
Reverse recovery time trr 100 ns IDR = 160 A, VGS = 0 V, -dIDR/dt = 50 A/µs 4
Reverse recovery charge Qrr 100 nC IDR = 160 A, VGS = 0 V, -dIDR/dt = 50 A/µs 4

CAD (KiCad official)

  • Symbol: TK1R5R04PB
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: D2PAK (KiCad packages3D, STEP)
  • 3D model files: tk1r5r04pb-etched.step / tk1r5r04pb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tk1r5r04pb.step / tk1r5r04pb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (11 pp, sha256 bf80fad83619de08, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF