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TK14E65W

Public Made by Adom

by adom

TOSHIBA MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

TK14E65W

TOSHIBA · MOSFETs · TO-220

TK14E65W from TOSHIBA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; enhancement mode with Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.69 mA) and VGSS rating of ±30 V.
2 Drain passive Drain terminal, connected to the heatsink tab; VDSS rating of 650 V and DC drain current of 13.7 A.
3 Source passive Source terminal; RDS(ON) is 0.22 Ω typ. (0.25 Ω max) at VGS = 10 V, ID = 6.9 A.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate leakage current IGSS -1 1 µA VGS = ±30 V, VDS = 0 V 3
Drain cut-off current IDSS 10 µA VDS = 650 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS 650 V ID = 10 mA, VGS = 0 V 3
Gate threshold voltage Vth 2.5 3.5 V VDS = 10 V, ID = 0.69 mA 3
Drain-source on-resistance RDS(ON) 0.22 0.25 Ω VGS = 10 V, ID = 6.9 A 3
Diode forward voltage VDSF -1.7 V IDR = 13.7 A, VGS = 0 V 3
MOSFET dv/dt ruggedness dv/dt 50 V/ns VDD = 0 to 400 V, ID = 6.9 A 3
Diode dv/dt ruggedness dv/dt 15 V/ns IDR = 6.9 A, VGS = 0 V, VDD = 400 V 3
Drain-source voltage VDSS 650 V 1
Gate-source voltage VGSS -30 30 V 1
Drain current (DC) ID 13.7 A Tc = 25 1
Drain current (pulsed) IDP 54.8 A 1
Power dissipation PD 130 W Tc = 25 1
Single-pulse avalanche energy EAS 194 mJ VDD = 90 V, Tch = 25 (initial), L = 25 mH, RG = 25 Ω, IAR = 3.7 A 1
Avalanche current IAR 3.7 A 1
Reverse drain current (DC) IDR 13.7 A 1
Reverse drain current (pulsed) IDRP 54.8 A 1
Channel temperature Tch 150 °C 1
Storage temperature Tstg -55 150 °C 1
Mounting torque TOR 0.6 Nm 1
Channel-to-case thermal resistance Rth(ch-c) 0.962 /W 2
Channel-to-ambient thermal resistance Rth(ch-a) 83.3 /W 2
Input capacitance Ciss 1300 pF VDS = 300 V, VGS = 0 V, f = 1 MHz 3
Reverse transfer capacitance Crss 4 pF VDS = 300 V, VGS = 0 V, f = 1 MHz 3
Output capacitance Coss 35 pF VDS = 300 V, VGS = 0 V, f = 1 MHz 3
Effective output capacitance Co(er) 55 pF VDS = 0 to 400 V, VGS = 0 V 3
Gate resistance rg 6 Ω VDS = OPEN, f = 1 MHz 3
Rise time tr 20 ns See Figure 6.2.1 3
Turn-on time ton 60 ns See Figure 6.2.1 3
Fall time tf 7 ns See Figure 6.2.1 3
Turn-off time toff 110 ns See Figure 6.2.1 3
Total gate charge Qg 35 nC VDD ≈ 400 V, VGS = 10 V, ID = 13.7 A 3
Gate-source charge 1 Qgs1 8 nC VDD ≈ 400 V, VGS = 10 V, ID = 13.7 A 3
Gate-drain charge Qgd 14 nC VDD ≈ 400 V, VGS = 10 V, ID = 13.7 A 3
Reverse recovery time trr 240 ns IDR = 6.9 A, VGS = 0 V, -dIDR/dt = 100 A/µs 3
Reverse recovery charge Qrr 2.8 µC IDR = 6.9 A, VGS = 0 V, -dIDR/dt = 100 A/µs 3
Peak reverse recovery current Irr 24 A IDR = 6.9 A, VGS = 0 V, -dIDR/dt = 100 A/µs 3

CAD (KiCad official)

  • Symbol: TK14E65W
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: tk14e65w-etched.step / tk14e65w-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tk14e65w.step / tk14e65w.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (10 pp, sha256 1a923c9d99e3c89c, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF