component

TK11S10N1L

Public Made by Adom

by adom

TOSHIBA MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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TK11S10N1L

TOSHIBA · MOSFETs · TO-252

TK11S10N1L from TOSHIBA, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate terminal; gate-source voltage rated ±20 V absolute maximum, with threshold Vth of 1.5 to 2.5 V (VDS = 10 V, ID = 0.1 mA).
2 Drain passive Drain terminal, connected to the heatsink tab; drain-source voltage is 100 V max and DC drain current is 11 A at Tc = 25 °C.
3 Source passive Source terminal; reverse drain (body diode) current is 11 A DC and 33 A pulsed.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 100 V Ta = 25°C 2
Gate-source voltage VGSS -20 20 V Ta = 25°C 2
Drain current (DC) ID 11 A Tc = 25°C 2
Drain current (pulsed) IDP 33 A Tc = 25°C 2
Power dissipation PD 65 W Tc = 25°C 2
Single-pulse avalanche energy EAS 33.8 mJ VDD = 80 V, Tch = 25°C (initial), L = 215 µH, RG = 25 Ω, IAS = 11 A 2
Single-pulse avalanche current IAS 11 A 2
Turn-off dVDS/dt ruggedness dVDS/dt 8.4 V/ns 2
Channel temperature Tch 175 °C 2
Storage temperature Tstg -55 175 °C 2
Channel-to-case thermal resistance Rth(ch-c) 2.3 °C/W 2
Gate leakage current IGSS -10 10 µA VGS = ±16 V, VDS = 0 V 3
Drain cut-off current IDSS 10 µA VDS = 100 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS 100 V ID = 10 mA, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSX 65 V ID = 10 mA, VGS = -20 V 3
Gate threshold voltage Vth 1.5 2.5 V VDS = 10 V, ID = 0.1 mA 3
Drain-source on-resistance RDS(ON) 31 50 mΩ VGS = 4.5 V, ID = 5.5 A 3
Drain-source on-resistance RDS(ON) 23 28 mΩ VGS = 10 V, ID = 5.5 A 3
Reverse drain current (DC) IDR 11 A 3
Reverse drain current (pulsed) IDRP 33 A 3
Diode forward voltage VDSF -1.2 V IDR = 11 A, VGS = 0 V 3

CAD (KiCad official)

  • Symbol: TK11S10N1L
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: tk11s10n1l-etched.step / tk11s10n1l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tk11s10n1l.step / tk11s10n1l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (9 pp, sha256 2ae687fb65c8f721, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF