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TK11A65D

Public Made by Adom

by adom

TOSHIBA MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TK11A65D

TOSHIBA · MOSFETs · TO-220

TK11A65D from TOSHIBA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±30 V, threshold Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA).
2 D passive Drain; drain-source voltage up to 650 V, DC drain current 11 A (44 A pulsed).
3 S passive Source; connects to the body diode anode and is the return for the 11 A drain current.

Key specifications

Parameter Value
Manufacturer TOSHIBA
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDSS 650 V 1
Gate-source voltage VGSS -30 30 V 1
Drain current (DC) ID 11 A 1
Drain current (pulsed) IDP 44 A 1
Power dissipation PD 45 W 1
Single-pulse avalanche energy EAS 506 mJ 1
Avalanche current IAR 11 A 1
Repetitive avalanche energy EAR 4.5 mJ 1
Channel temperature Tch 150 1
Storage temperature Tstg -55 150 1
Channel-to-case thermal resistance Rth(ch-c) 2.78 /W 2
Channel-to-ambient thermal resistance Rth(ch-a) 62.5 /W 2
Gate leakage current IGSS -1 1 µA VGS = ±30 V, VDS = 0 V 3
Drain cut-off current IDSS 10 µA VDS = 650 V, VGS = 0 V 3
Drain-source breakdown voltage V(BR)DSS 650 V ID = 10 mA, VGS = 0 V 3
Gate threshold voltage Vth 2 4 V VDS = 10 V, ID = 1 mA 3
Drain-source on-resistance RDS(ON) 0.54 0.7 Ω VGS = 10 V, ID = 5.5 A 3
Forward transfer admittance /Yfs/ 1.9 7.5 S VDS = 10 V, ID = 5.5 A 3
Reverse drain current (DC) IDR 11 A 3
Reverse drain current (pulsed) IDRP 44 A 3
Diode forward voltage VDSF -1.7 V IDR1 = 11 A, VGS = 0 V 3
Input capacitance Ciss 1700 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 3
Reverse transfer capacitance Crss 8 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 3
Output capacitance Coss 157 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 3
Switching time (rise time) tr 30 ns See Figure 6.2.1. 3
Switching time (turn-on time) ton 80 ns See Figure 6.2.1. 3
Switching time (fall time) tf 18 ns See Figure 6.2.1. 3
Switching time (turn-off time) toff 135 ns See Figure 6.2.1. 3
Total gate charge (gate-source plus gate-drain) Qg 30 nC VDD ≈ 400 V, VGS = 10 V, ID = 11 A 3
Gate-source charge Qgs 21 nC VDD ≈ 400 V, VGS = 10 V, ID = 11 A 3
Gate-drain charge Qgd 9 nC VDD ≈ 400 V, VGS = 10 V, ID = 11 A 3
Reverse recovery time trr 1300 ns IDR = 11 A, VGS = 0 V, -dIDR/dt = 100 A/µs 3
Reverse recovery charge Qrr 14 µC IDR = 11 A, VGS = 0 V, -dIDR/dt = 100 A/µs 3

CAD (KiCad official)

  • Symbol: TK11A65D
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: tk11a65d-etched.step / tk11a65d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tk11a65d.step / tk11a65d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: TOSHIBA datasheet (9 pp, sha256 a16f551d7a2f75aa, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF