# TK10P60W

**TOSHIBA** · MOSFETs · DPAK

TK10P60W from TOSHIBA, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the MOSFET; the gate-source voltage is rated at ±30 V (VGSS) absolute maximum. |
| 2 | Drain (Heatsink) | passive | Drain terminal, also the heatsink tab; drain-source voltage is rated at 600 V (VDSS) and continuous drain current at 9.7 A (ID) absolute maximum. |
| 3 | Source | passive | Source terminal; the datasheet gives no source-pin-specific limit, but the body-diode reverse drain current is rated at 9.7 A DC (IDR) and 38.8 A pulsed (IDRP). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | V(BR)DSS | 600 |  |  | V | ID = 10 mA, VGS = 0 V | 3 |
| Gate threshold voltage | Vth | 2.7 |  | 3.7 | V | VDS = 10 V, ID = 0.5 mA | 3 |
| MOSFET dv/dt ruggedness | dv/dt | 50 |  |  | V/ns | VDD = 0 to 400 V, ID = 4.9 A | 3 |
| Diode dv/dt ruggedness | dv/dt | 15 |  |  | V/ns | IDR = 4.9 A, VGS = 0 V, VDD = 400 V | 3 |
| Gate leakage current | IGSS | -1 |  | 1 | µA | VGS = ±30 V, VDS = 0 V | 3 |
| Drain cut-off current | IDSS |  |  | 10 | µA | VDS = 600 V, VGS = 0 V | 3 |
| Drain-source on-resistance | RDS(ON) |  | 0.327 | 0.43 | Ω | VGS = 10 V, ID = 4.9 A | 3 |
| Diode forward voltage | VDSF |  |  | -1.7 | V | IDR = 9.7 A, VGS = 0 V | 3 |
| Drain-source voltage | VDSS |  |  | 600 | V |  | 2 |
| Gate-source voltage | VGSS | -30 |  | 30 | V |  | 2 |
| Drain current (DC) | ID |  |  | 9.7 | A | Tc = 25 | 2 |
| Drain current (pulsed) | IDP |  |  | 38.8 | A | Tc = 25 | 2 |
| Power dissipation | PD |  |  | 80 | W | Tc = 25 | 2 |
| Single-pulse avalanche energy | EAS |  |  | 121 | mJ | Note 2: VDD = 90 V, Tch = 25, L = 33.9 mH, RG = 25 Ω, IAR = 2.5 A | 2 |
| Avalanche current | IAR |  |  | 2.5 | A |  | 2 |
| Reverse drain current (DC) | IDR |  |  | 9.7 | A |  | 2 |
| Reverse drain current (pulsed) | IDRP |  |  | 38.8 | A |  | 2 |
| Channel temperature | Tch |  |  | 150 |  | Ensure channel temperature does not exceed 150 (Note 1) | 2 |
| Storage temperature | Tstg | -55 |  | 150 |  |  | 2 |
| Channel-to-case thermal resistance | Rth(ch-c) |  |  | 1.57 | /W |  | 2 |

## CAD (KiCad official)

- Symbol: `TK10P60W`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files: `tk10p60w-etched.step` / `tk10p60w-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tk10p60w.step` / `tk10p60w.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589785445971496960) (10 pp, sha256 `07627c65fba15080`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tk10p60w-datasheet.pdf)