component
TK100E10N1
Public Made by Adomby adom
TOSHIBA MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownTK100E10N1
TOSHIBA · MOSFETs · TO-220
TK100E10N1 from TOSHIBA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the datasheet gives gate-source voltage limits of ±20 V (VGSS) and a gate threshold voltage Vth of 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA). |
| 2 | Drain (heatsink) | passive | Drain terminal of the MOSFET, also connected to the metal heatsink tab; the datasheet gives a drain-source voltage rating VDSS of 100 V and a DC drain current ID of 207 A (Tc = 25 °C, silicon limit). |
| 3 | Source | passive | Source terminal of the N-channel MOSFET, which is the return path for drain current; the datasheet specifies the reverse drain current IDR of 100 A (DC) and the diode forward voltage VDSF of -1.2 V max at IDR = 100 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | 100 | V | 1 | |||
| Gate-source voltage | VGSS | -20 | 20 | V | 1 | ||
| Drain current (DC) (Silicon limit) | ID | 207 | A | Silicon limit | 1 | ||
| Drain current (DC) | ID | 100 | A | Tc = 25 | 1 | ||
| Drain current (pulsed) | IDP | 434 | A | t = 1 ms | 1 | ||
| Power dissipation | PD | 255 | W | Tc = 25 | 1 | ||
| Single-pulse avalanche energy | EAS | 222 | mJ | Note 4: VDD = 80 V, Tch = 25 (initial), L = 17.1 µH, IAR = 100 A | 1 | ||
| Avalanche current | IAR | 100 | A | 1 | |||
| Channel temperature | Tch | 150 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 150 | °C | 1 | ||
| Channel-to-case thermal resistance | Rth(ch-c) | 0.49 | /W | 2 | |||
| Channel-to-ambient thermal resistance | Rth(ch-a) | 83.3 | /W | 2 | |||
| Gate leakage current | IGSS | -0.1 | 0.1 | µA | VGS = ±20 V, VDS = 0 V | 3 | |
| Drain cut-off current | IDSS | 10 | µA | VDS = 100 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | ID = 10 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage (VGS = -20 V) | V(BR)DSX | 65 | V | ID = 10 mA, VGS = -20 V | 3 | ||
| Gate threshold voltage | Vth | 2 | 4 | V | VDS = 10 V, ID = 1.0 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 2.8 | 3.4 | mΩ | VGS = 10 V, ID = 50 A | 3 | |
| Reverse drain current (DC) | IDR | 100 | A | 4 | |||
| Reverse drain current (pulsed) | IDRP | 434 | A | 4 | |||
| Diode forward voltage | VDSF | -1.2 | V | IDR = 100 A, VGS = 0 V | 4 |
CAD (KiCad official)
- Symbol:
TK100E10N1 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
tk100e10n1-etched.step/tk100e10n1-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tk100e10n1.step/tk100e10n1.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (9 pp, sha256
82fa1c051fb0112e, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).