# TK100E08N1

**TOSHIBA** · MOSFETs · TO-220

TK100E08N1 from TOSHIBA, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the N-channel MOSFET; the gate-source voltage must stay within the absolute maximum rating VGSS = ±20 V. |
| 2 | Drain (heatsink) | passive | Drain terminal, electrically connected to the heatsink tab; the drain-source voltage is limited to VDSS = 80 V and the DC drain current is limited to 100 A by the package. |
| 3 | Source | passive | Source terminal of the MOSFET; the DC reverse drain current (IDR) is rated at 100 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS |  |  | 80 | V |  | 1 |
| Gate-source voltage | VGSS | -20 |  | 20 | V |  | 1 |
| Drain current (DC) | ID |  |  | 214 | A | Silicon limit | 1 |
| Drain current (DC) | ID |  |  | 100 | A | Note 1,3 | 1 |
| Drain current (pulsed) | IDP |  |  | 568 | A | t = 1 ms | 1 |
| Power dissipation | PD |  |  | 255 | W | Tc = 25 | 1 |
| Single-pulse avalanche energy | EAS |  |  | 278 | mJ | Note 4 | 1 |
| Avalanche current | IAR |  |  | 100 | A | Note 1 | 1 |
| Channel temperature | Tch |  |  | 150 | °C |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 1 |
| Channel-to-case thermal resistance | Rth(ch-c) |  |  | 0.49 | /W |  | 2 |
| Channel-to-ambient thermal resistance | Rth(ch-a) |  |  | 83.3 | /W |  | 2 |
| Gate leakage current | IGSS | -0.1 |  | 0.1 | µA | VGS = ±20 V, VDS = 0 V | 3 |
| Drain cut-off current | IDSS |  |  | 10 | µA | VDS = 80 V, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 80 |  |  | V | ID = 10 mA, VGS = 0 V | 3 |
| Drain-source breakdown voltage | V(BR)DSX | 60 |  |  | V | ID = 10 mA, VGS = -20 V | 3 |
| Gate threshold voltage | Vth | 2 |  | 4 | V | VDS = 10 V, ID = 1.0 mA | 3 |
| Drain-source on-resistance | RDS(ON) |  | 2.6 | 3.2 | mΩ | VGS = 10 V, ID = 50 A | 3 |
| Reverse drain current (DC) | IDR |  |  | 100 | A |  | 4 |
| Reverse drain current (pulsed) | IDRP |  |  | 568 | A |  | 4 |
| Diode forward voltage | VDSF |  |  | -1.2 | V | IDR = 100 A, VGS = 0 V | 4 |

## CAD (KiCad official)

- Symbol: `TK100E08N1`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files: `tk100e08n1-etched.step` / `tk100e08n1-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `tk100e08n1.step` / `tk100e08n1.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [TOSHIBA datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887810342731776) (9 pp, sha256 `8604c3f1f3bb2c87`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/tk100e08n1-datasheet.pdf)