component
TJ90S04M3L
Public Made by Adomby adom
TOSHIBA MOSFETs, DPAK. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 16d ago |
| viewers | 16d ago |
| package.json | 16d ago |
| page.json | 16d ago |
| README.md | 16d ago |
| tj90s04m3l-etched.glb | 16d ago |
| tj90s04m3l-etched.step | 16d ago |
| tj90s04m3l-hero.glb | 16d ago |
| tj90s04m3l-hero.overlay.json | 16d ago |
| tj90s04m3l.glb | 16d ago |
| tj90s04m3l.kicad_mod | 16d ago |
| tj90s04m3l.kicad_sym | 16d ago |
| tj90s04m3l.lbr | 16d ago |
| tj90s04m3l.step | 16d ago |
TJ90S04M3L
TOSHIBA · MOSFETs · DPAK
TJ90S04M3L from TOSHIBA, in a DPAK. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Gate | input | Gate terminal of the P-channel MOSFET, rated for a gate-source voltage (VGSS) of +10/-20 V. |
| 2 | Drain (heatsink) | passive | Drain terminal, electrically connected to the heatsink tab, rated for a drain-source voltage (VDSS) of -40 V. |
| 3 | Source | passive | Source terminal, the reference for the gate-source voltage and the drain current ratings (DC drain current -90 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | DPAK |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDSS | -40 | V | 1 | |||
| Gate-source voltage | VGSS | -20 | 10 | V | 1 | ||
| Drain current (DC) | ID | -90 | A | 1 | |||
| Drain current (pulsed) | IDP | -180 | A | 1 | |||
| Power dissipation | PD | 180 | W | Tc = 25 °C | 1 | ||
| Single-pulse avalanche energy | EAS | 156 | mJ | Note 3: VDD = -25 V, Tch = 25 °C (initial), L = 20 µH, RG = 25 Ω, IAS = -90 A, VG = 0/-15 V | 1 | ||
| Single-pulse avalanche current | IAS | -90 | A | 1 | |||
| Channel temperature | Tch | 175 | °C | 1 | |||
| Storage temperature | Tstg | -55 | 175 | °C | 1 | ||
| Channel-to-case thermal resistance | Rth(ch-c) | 0.83 | /W | 2 | |||
| Gate leakage current | IGSS | -1 | 1 | µA | VGS = +10/-20 V, VDS = 0 V | 3 | |
| Drain cut-off current | IDSS | -10 | µA | VDS = -40 V, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | -40 | V | ID = -10 mA, VGS = 0 V | 3 | ||
| Drain-source breakdown voltage | V(BR)DSX | -30 | V | ID = -10 mA, VGS = 10 V | 3 | ||
| Gate threshold voltage | Vth | -1 | -2 | V | VDS = -10 V, ID = -1 mA | 3 | |
| Drain-source on-resistance | RDS(ON) | 4.3 | 6 | mΩ | VGS = -4.5 V, ID = -45 A | 3 | |
| Drain-source on-resistance | RDS(ON) | 3.4 | 4.3 | mΩ | VGS = -10 V, ID = -45 A | 3 | |
| Reverse drain current (DC) | IDR | -90 | A | 3 | |||
| Reverse drain current (pulsed) | IDRP | -180 | A | 3 | |||
| Diode forward voltage | VDSF | 1.2 | V | IDR = -90 A, VGS = 0 V | 3 |
CAD (KiCad official)
- Symbol:
TJ90S04M3L - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: DPAK (KiCad packages3D, STEP)
- 3D model files:
tj90s04m3l-etched.step/tj90s04m3l-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);tj90s04m3l.step/tj90s04m3l.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (10 pp, sha256
ebf557c341f955f8, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).