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TJ30S06M3L-VB

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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TJ30S06M3L-VB

VBsemi Elec · MOSFETs · TO-252

TJ30S06M3L-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with an absolute maximum gate-source voltage of ±20 V and a gate threshold of -1.5 V min to -3 V max at ID = -250 µA.
2 D passive Drain of the P-channel MOSFET, shown as the center lead and the tab, with an absolute maximum drain-source voltage of -60 V and a continuous drain current of -50 A at TC = 25 °C.
3 S passive Source of the P-channel MOSFET, with a continuous body-diode current of -40 A and a pulsed current of -80 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

CAD (KiCad official)

  • Symbol: TJ30S06M3L-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: tj30s06m3l-vb-etched.step / tj30s06m3l-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tj30s06m3l-vb.step / tj30s06m3l-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 f5116a2536c6f910, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF