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TISP4500H3BJR-S

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BOURNS Semiconductor Discharge Tubes (TSS), SMB(DO-214AA). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TISP4500H3BJR-S

BOURNS · Semiconductor Discharge Tubes (TSS) · SMB(DO-214AA)

TISP4500H3BJR-S from BOURNS, in a SMB(DO-214AA). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 R passive R terminal of the symmetrical bidirectional thyristor overvoltage protector, with repetitive peak off-state voltage of ±350 V and breakover voltage of ±500 V, and all datasheet measurements are referenced to this terminal.
2 T passive T terminal of the symmetrical bidirectional thyristor overvoltage protector, which limits overvoltages on the line to ±500 V over the temperature range with a minimum off-state voltage of ±350 V.

Key specifications

Parameter Value
Manufacturer BOURNS
Package SMB(DO-214AA)
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state current, TA = 25 °C IDRM -5 5 μA VD = VDRM, TA = 25 °C 2
Repetitive peak off-state current, TA = 70 °C IDRM -10 10 μA VD = VDRM, TA = 70 °C 2
Breakover voltage V(BO) -500 500 V dv/dt = ±250 V/ms, RSOURCE= 300 Ω 2
Impulse breakover voltage V(BO) -500 500 V ITU-T recommendation K.44 (02/2000), Figure A.3-1/K.44 10/700 impulse generator, Charge Voltage = ±4 kV 2
Breakover current I(BO) -0.6 0.6 A dv/dt = ±250 V/ms, RSOURCE= 300 Ω 2
Holding current IH -0.15 0.15 A IT = ±5 A, di/dt = -/+30 mA/ms 2
Off-state current ID -10 10 μA VD = ±50 V, TA = 70 °C 2
Repetitive peak off-state voltage VDRM -350 350 V 2
Non-repetitive peak on-state pulse current, 2/10 μs voltage wave shape (GR-1089-CORE) IPPSM 500 A TA = 25 °C 2
Non-repetitive peak on-state pulse current, 10/250 μs voltage wave shape (GR-1089-CORE) IPPSM 230 A TA = 25 °C 2
Non-repetitive peak on-state pulse current, 10/700 (ITU-T K.20/21/45, 5/310 s current wave shape) IPPSM 200 A TA = 25 °C 2
Non-repetitive peak on-state pulse current, 10/1000 μs voltage wave shape (GR-1089-CORE) IPPSM 100 A TA = 25 °C 2
Non-repetitive peak on-state current, 50 Hz, 20 ms (1 cycle) ITSM -55 55 A 50 Hz, 20 ms (1 cycle) 2
Non-repetitive peak on-state current, 50 Hz, 1000 s ITSM -2 2 A 50 Hz, 1000 s 2
Junction temperature TJ -40 150 °C 2
Storage temperature range Tstg -65 150 °C 2
Junction to free air thermal resistance, EIA/JESD51-3 PCB RθJA 113 °C/W EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 °C 2
Junction to free air thermal resistance, 265 mm x 210 mm populated line card, 4-layer PCB RθJA 50 °C/W 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 °C 2
Operating ambient temperature range (controlled environment) TA 0 70 °C 1

CAD (KiCad official)

  • Symbol: TISP4500H3BJR-S
  • Footprint: Diode_SMD:D_SMB
  • 3D model: SMB(DO-214AA) (KiCad packages3D, STEP)
  • 3D model files: tisp4500h3bjr-s-etched.step / tisp4500h3bjr-s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tisp4500h3bjr-s.step / tisp4500h3bjr-s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: BOURNS datasheet (5 pp, sha256 481f93eb7d15d5ed, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF