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TISP4350H3BJR-S

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BOURNS Thyristor Surge Suppressors (TSS), SMB(DO-214AA). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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TISP4350H3BJR-S

BOURNS · Thyristor Surge Suppressors (TSS) · SMB(DO-214AA)

TISP4350H3BJR-S from BOURNS, in a SMB(DO-214AA). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 R passive Terminal R (alternative line designator B) is the reference terminal to which all device voltage measurements are referenced, and the device limits the voltage between T and R to ±V(BO) (275 V min to 400 V max depending on variant; 350 V typ for TISP4350H3BJ).
2 T passive Terminal T (alternative line designator A) is the other line terminal of this symmetrical two-terminal bidirectional thyristor overvoltage protector, rated for VDRM of ±275 V for the TISP4350H3BJ.

Key specifications

Parameter Value
Manufacturer BOURNS
Package SMB(DO-214AA)
Category Circuit Protection
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Repetitive peak off-state voltage (TISP4350H3BJ) VDRM -275 275 V 3
Non-repetitive peak on-state pulse current, 2/10 µs ITSP 500 A 2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 3
Non-repetitive peak on-state pulse current, 8/20 µs ITSP 300 A 8/20 µs (IEC 61000-4-5, 1.2/50 µs voltage, 8/20 current combination wave generator) 3
Non-repetitive peak on-state pulse current, 10/160 µs ITSP 250 A 10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 3
Non-repetitive peak on-state pulse current, 5/200 µs ITSP 220 A 5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 3
Non-repetitive peak on-state pulse current, 0.2/310 µs ITSP 200 A 0.2/310 µs (I3124, 0.5/700 µs voltage wave shape) 3
Non-repetitive peak on-state pulse current, 5/310 µs (ITU-T K.20/21) ITSP 200 A 5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape) 3
Non-repetitive peak on-state pulse current, 5/310 µs (FTZ R12) ITSP 200 A 5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 3
Non-repetitive peak on-state pulse current, 10/560 µs ITSP 160 A 10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 3
Non-repetitive peak on-state pulse current, 10/1000 µs ITSP 100 A 10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 3
Non-repetitive peak on-state current, 20 ms (50 Hz) ITSM 55 A 20 ms (50 Hz) full sine wave 3
Non-repetitive peak on-state current, 16.7 ms (60 Hz) ITSM 60 A 16.7 ms (60 Hz) full sine wave 3
Non-repetitive peak on-state current, 1000 s ITSM 2.1 A 1000 s 50 Hz/60 Hz a.c. 3
Initial rate of rise of on-state current diT/dt 400 A/µs Exponential current ramp, Maximum ramp value < 200 A 3
Junction temperature TJ -40 150 °C 3
Storage temperature range Tstg -65 150 °C 3
Repetitive peak off-state current IDRM -5 5 µA VD = VDRM, TA = 25 °C 4
Repetitive peak off-state current IDRM -10 10 µA VD = VDRM, TA = 85 °C 4
Breakover voltage V(BO) -350 350 V dv/dt = ±750 V/ms, RSOURCE = 300 Ω 4
Impulse breakover voltage V(BO) -362 362 V dv/dt ≤ ±1000 V/µs, Linear voltage ramp, Maximum ramp value = ±500 V; di/dt = ±20 A/µs, Linear current ramp, Maximum ramp value = ±10 A 4
Breakover current I(BO) -0.15 0.6 A dv/dt = ±750 V/ms, RSOURCE = 300 Ω 4
On-state voltage VT -3 3 V IT = ±5 A, tW = 100 µs 4
Holding current IH -0.15 0.6 A IT = ±5 A, di/dt = -/+30 mA/ms 4
Critical rate of rise of off-state voltage dv/dt -5 5 kV/µs Linear voltage ramp, Maximum ramp value < 0.85VDRM 4
Off-state current ID -10 10 µA VD = ±50 V, TA = 85 °C 4
Off-state capacitance, max Coff 84 pF f = 100 kHz, Vd = 1 V rms, VD = 0 (TISP4240 thru 4400 group) 5
Off-state capacitance, typ Coff 70 pF f = 100 kHz, Vd = 1 V rms, VD = 0 (TISP4240 thru 4400 group) 5
Off-state capacitance, max Coff 67 pF f = 100 kHz, Vd = 1 V rms, VD = -1 V (TISP4240 thru 4400 group) 5
Off-state capacitance, typ Coff 60 pF f = 100 kHz, Vd = 1 V rms, VD = -1 V (TISP4240 thru 4400 group) 5
Off-state capacitance, max Coff 62 pF f = 100 kHz, Vd = 1 V rms, VD = -2 V (TISP4240 thru 4400 group) 5
Off-state capacitance, typ Coff 55 pF f = 100 kHz, Vd = 1 V rms, VD = -2 V (TISP4240 thru 4400 group) 5
Off-state capacitance, max Coff 28 pF f = 100 kHz, Vd = 1 V rms, VD = -50 V (TISP4240 thru 4400 group) 5
Off-state capacitance, typ Coff 24 pF f = 100 kHz, Vd = 1 V rms, VD = -50 V (TISP4240 thru 4400 group) 5
Off-state capacitance, max Coff 26 pF f = 100 kHz, Vd = 1 V rms, VD = -100 V (TISP4240 thru 4400 group) 5
Off-state capacitance, typ Coff 22 pF f = 100 kHz, Vd = 1 V rms, VD = -100 V (TISP4240 thru 4400 group) 5
Junction to free air thermal resistance RθJA 113 °C/W EIA/JESD51-3 PCB, IT = ITSM(1000), TA = 25 °C 5
Junction to free air thermal resistance RθJA 50 °C/W 265 mm x 210 mm populated line card, 4-layer PCB, IT = ITSM(1000), TA = 25 °C 5

CAD (KiCad official)

  • Symbol: TISP4350H3BJR-S
  • Footprint: Diode_SMD:D_SMB
  • 3D model: SMB(DO-214AA) (KiCad packages3D, STEP)
  • 3D model files: tisp4350h3bjr-s-etched.step / tisp4350h3bjr-s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); tisp4350h3bjr-s.step / tisp4350h3bjr-s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: BOURNS datasheet (13 pp, sha256 db251843db59a0d6, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF